MT49H16M18CBM-25 IT:B TR

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Memory is an essential part of almost all modern computing applications. The MT49H16M18CBM-25 IT:B TR is a high-performance memory module designed for high-end computer applications. It is a synchronous dynamic random access memory (SDRAM) module which combines the high-speed operation of DDR4 SDRAM technology with the low-power operation of low-voltage memory modules. This combination makes it suitable for a wide range of applications from mobile to server, from gaming to virtual systems, and from embedded to scientific computing.

The MT49H16M18CBM-25 IT:B TR is a 3-2-2-1 module which contains sixteen 1-gigabit memory chips, each with 16 megabits of data storage. It is designed to operate at a maximum frequency of 2133 MHz and supports data transfer rates of up to 17.2 GB/s. The module\'s low voltage operation of 1.2V makes it particularly suitable for mobile, gaming, and embedded applications. It also supports both error-correcting code (ECC) and error-detecting code (EDC) functions in order to ensure reliable data transfer.

The working principle of the MT49H16M18CBM-25 IT:B TR memory module is based on the concept of storing data in the form of electrical pulses. The module contains an array of RAM cells which are connected to a bank of address lines and data buses. An address line is used to select the particular RAM cell which is to be read or written to and the data is transferred through the data buses. When a write command is initiated, the data is written to the selected RAM cell and then stored until it is read again or deleted.

When a read command is issued, the module will access the requested RAM cell and the data stored within it will be transferred to the selected output line. The MT49H16M18CBM-25 IT:B TR memory module is designed for fast access times, allowing for up to 230 nanoseconds of refresh time between successive reads. This helps to ensure that the data stored in the RAM cells is always up-to-date and accurate.

In addition to its high speed and low-power operation, the MT49H16M18CBM-25 IT:B TR memory module also boasts a high level of reliability. This is achieved through its ability to detect potential errors at the time of data transfer and automatically correct them before they can cause any damage. This ensures the accuracy of the data and provides peace of mind for those who rely on the accuracy of their computers.

In conclusion, the MT49H16M18CBM-25 IT:B TR is a high-performance memory module designed for a range of applications. Its low-power operation, high-speed operation, and error-detection and error-correction features provide an excellent combination for a wide range of applications from mobile to server, from gaming to virtual systems, and from embedded to scientific computing.

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