Allicdata Part #: | MT49H32M18CSJ-25E:BTR-ND |
Manufacturer Part#: |
MT49H32M18CSJ-25E:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 576M PARALLEL 144FBGA |
More Detail: | DRAM Memory IC 576Mb (32M x 18) Parallel 400MHz 15... |
DataSheet: | MT49H32M18CSJ-25E:B TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 576Mb (32M x 18) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 144-TFBGA |
Supplier Device Package: | 144-FBGA (18.5x11) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology is one of the most important components for computer systems. The MT49H32M18CSJ-25E:B TR is a type of dynamic random access memory (DRAM). This type of memory is widely used in computer systems because of its efficiency, affordability, and its versatility in application fields.
Dynamic random access memory is more complex than other types of memory. It utilizes the core features of electrical components such as transistor-capacitor pairs to store data. To store data, a row and column address is sent to a memory cell. The row address is sent to a row amplifier while the column address is sent to a column amplifier. Once the amplifiers detect the address patterns, the transistor capacitors will be enabled to either store or read data. By relying on the electrical capacities, DRAM is able to store multiple data with only one memory chip.
The MT49H32M18CSJ-25E:B TR is a high-density, high-speed, low-power SDRAM chip. It has eight internal banks which provide a maximum of 4GB capacity. It also supports 2-way and 4-way interleaving and has error correction, repair, and auto-refresh capabilities. This chip has a 17×17 array that can accommodate 186 million bits. The maximum memory clock frequency for this chip is 166MHz and the corresponding clock period is 6ns.
The MT49H32M18CSJ-25E:B TR is mostly used in graphics processing, diskless workstation clusters, image processing, and digital video applications. It is also used in many embedded applications due to its low power requirements and fast speeds. Because of its high capacity, it is often used in gaming consoles and high-end PCs. This chip could even be applied to industrial automation equipment including robotics, automation controllers, and machine vision systems.
The working principle of the MT49H32M18CSJ-25E:B TR is based on the dynamic random access memory technology. It utilizes a transistor capacitor pair to store and retrieve data. By using address outputs, row and column amplifiers are enabled, allowing the transistor-capacitor pair to store or read data. The chip has a high memory capacity and can support multiple interfacing protocols, making it a great choice for various applications.
In conclusion, the MT49H32M18CSJ-25E:B TR is a type of dynamic random access memory (DRAM) chip which is widely used in computer systems. It has a high density and memory capacity, as well as low power requirements and fast data processing. This chip is mostly used in graphics processing, diskless workstation clusters, image processing, digital video applications, and embedded applications. The working principle of this chip is based on the dynamic random access memory technology and it utilizes a transistor capacitor pair to store or read data.
The specific data is subject to PDF, and the above content is for reference
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