MT49H32M9FM-25 TR

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What Is MT49H32M9FM-25 TR?
MT49H32M9FM-25 TR is a high-speed and low-power dual-bank synchronous DRAM (SDRAM) manufactured by Micron Technology. It is a low-power version of the popular MT49H32M9FM-25. The lower power consumption makes it suitable for a variety of applications that require high-performance yet power- conservative memory subsystems. The MT49H32M9FM-25 TR features a 512M4bit depth, an 8K-byte page size, and a DDR3 addressing scheme.

Application Fields of MT49H32M9FM-25 TR
The MT49H32M9FM-25 TR SDRAM is an ideal choice for a variety of computing and entertainment applications. Its low power consumption makes it an ideal solution for use in mobile devices such as tablets and digital cameras. Its high performance makes it a good choice for use in embedded systems, as well as for PCs, servers and other high-performance systems. Its smaller form factor allows for it to be used in space-constrained systems more easily.

The MT49H32M9FM-25 TR is also well-suited for use in gaming systems, multimedia systems and home theater systems. Its high speed and low power consumption makes it ideal for these applications. The on-chip ECC (error-correcting code) helps protect data integrity for high-quality graphics and sound, making it an ideal solution for these types of applications.

Working Principle of MT49H32M9FM-25 TR
The MT49H32M9FM-25 TR SDRAM works by allowing each clock cycle (CK) to be broken into two accesses (or banks). This is called a "dual-bank" memory. During the first bank or access, the MT49H32M9FM-25 TR reads or writes data in the memory array. During the second bank, the data can either be refreshed or a new access can be initiated.

The DRAM (Dynamic Random Access Memory) achieves improved performance and lower standby power consumption through an advanced burst architecture. This architecture lets the memory controller access and burst data in four-byte increments instead of one-byte increments. This allows for faster data access and lower current requirements.

The MT49H32M9FM-25 TR SDRAM also features a fast self-refresh technology that helps to reduce power consumption. The self-refresh mechanism allows the SDRAM to enter and exit the self-refresh state with only one clock cycle. This reduces the average refresh power (ARP) of the memory and helps to create a low-power, highly reliable memory subsystem.

In addition, the MT49H32M9FM-25 TR SDRAM also includes an on-chip register that allows the memory controller to get status information about the memory array. This helps to ensure the reliability and performance of the memory. This register can also be used to enable faster data transfers by reducing the amount of time spent in the latency phase.

The MT49H32M9FM-25 TR SDRAM is a high-performance, low-power dual-bank synchronous DRAM memory. Its innovative burst architecture and fast self-refresh technology make it an ideal choice for a variety of computing applications, including embedded systems, PCs, and mobile devices, as well as for gaming and multimedia systems. Its on-chip register and low-power design help to ensure a reliable and power-efficient memory subsystem.

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