MT49H8M36FM-25:B TR

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Memory is an important device in computers which stores data and instructions that are used by the central processing unit. MT49H8M36FM-25:B TR is an integrated circuit (IC) DRAM device which makes use of the latest DRAM technologies to provide higher memory densities, faster access times and better power consumption than conventional DRAM devices. It also works with higher speed memory buses and is used in embedded and consumer electronics applications.

The MT49H8M36FM-25:B TR is a dual-rank, 8M x36-bit SDRAM device. Each rank contains 4M bytes of x36-bit SDRAM and the total total capacity of the device is 16M bytes. The device offers a variety of features to enhance the applications for which it is used. These features include an array of built-in refresh circuitry, error detection and correction, high speed accesses and power management. These features enable the device to excel in a wide range of consumer electronics and other embedded applications.

The MT49H8M36FM-25:B TR has an internal clock frequency of 100 MHz and is capable of supporting clock frequencies up to 166 MHz. It is a synchronous device, and its interface is compatible with asynchronous bus architectures such as DDR, DDR2 and DDR3. Along with its high speed, the device also supports low-power operation and is capable of consuming only 12 mW of power when in in standby mode. Its power management and error correction features enable it to extend its battery life and performance.

The MT49H8M36FM-25:B TR is suitable for a variety of applications, such as digital camera memory, multimedia processors, set-top boxes, home entertainment systems, video game systems and portable digital devices. It is also suitable for applications in system-on-chip (SoC) designs, in which the device works as an embedded controller within a single chip device. Its wide range of features make it ideal for a wide range of embedded and consumer electronics applications.

The working principle of the MT49H8M36FM-25:B TR is based on the principle of dynamic random access memory (DRAM). DRAM works by storing each bit of data on a tiny capacitor. When the charge on the capacitor is not strong, it indicates a zero, while a strong charge indicates a 1. The device is then accessed, either by reading or writing, by applying a voltage to the capacitor. This allows the device to quickly change states and store data.

The MT49H8M36FM-25:B TR offers many advantages over conventional DRAM devices. It has higher memory densities, faster access times and improved power efficiency. It also supports high-speed memory buses and is used in embedded and consumer electronics applications. With its wide array of features, the device is ideal for a wide range of embedded and consumer electronics applications.

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