| Allicdata Part #: | MT49H32M18CSJ-25EIT:B-ND |
| Manufacturer Part#: |
MT49H32M18CSJ-25E IT:B |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 576M PARALLEL 144FBGA |
| More Detail: | DRAM Memory IC 576Mb (32M x 18) Parallel 400MHz 15... |
| DataSheet: | MT49H32M18CSJ-25E IT:B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | DRAM |
| Memory Size: | 576Mb (32M x 18) |
| Clock Frequency: | 400MHz |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 15ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 144-TFBGA |
| Supplier Device Package: | 144-FBGA (18.5x11) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT49H32M18CSJ-25E IT:B is a type of memory that plays an important role in many electronic products. It is widely used in a variety of applications, ranging from consumer electronics and medical equipment to aerospace and industrial automation. In this article, we will discuss the application field and working principle of the MT49H32M18CSJ-25E memory.
The MT49H32M18CSJ-25E is a high performance and power efficient DRAM product designed for a range of applications. It is ideal for discrete memory error detection and correction when used in mission critical systems. Additionally, it can be used in memory intensive applications, such as web servers, game consoles and high-performance computing, as well as applications that require high data bandwidth. The MT49H32M18CSJ-25E can provide up to 512 MB of memory, making it suitable for a range of applications.
The MT49H32M18CSJ-25E utilizes a bit-level error correction code (ECC) to provide data integrity and reliability. The ECC is an effective method for detecting and correcting single-bit errors without the need for hardware redundancy. The ECC is implemented as a single-error correction/double-error detection (SEC-DED) algorithm that utilizes a nine-bit ECC code to detect and correct single-bit errors and multiple-bit errors. This helps to ensure that data remains accurate and reliable over long periods of time.
The MT49H32M18CSJ-25E also has a built-in memory refresh and self-refresh mechanism that helps maintain data integrity and prevents data loss in the event of a power failure. This memory refresh mechanism is based on the refresh counter (RFC) circuitry, which is pre-programmed to the desired refresh rate. This feature helps to ensure that data is kept up-to-date and that the memory contents remain valid at all times.
The MT49H32M18CSJ-25E also has a feature called “auto-refresh”. This feature allows the user to set a timer to periodically refresh the memory in order to maintain data accuracy. This feature helps to ensure that the memory contents remain valid even in the event of a power failure. Additionally, the MT49H32M18CSJ-25E has a “burst-mode” architecture that allows data to be accessed quickly and efficiently.
The MT49H32M18CSJ-25E is a versatile memory solution that is suitable for a wide range of applications. It has many advantageous features, such as ECC, memory refresh and self-refresh, and auto-refresh, which help to ensure data accuracy and reliability. Additionally, the MT49H32M18CSJ-25E also has an efficient burst-mode architecture that allows data to be accessed quickly and efficiently. This makes it ideal for applications that require high bandwidth and data integrity.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT49H16M36FM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H64M9SJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36SJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M18CTR-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 400... |
| MT49H16M18BM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18BM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M18CBM-25 IT:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36BM-TI:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H64M9BM-25:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M18SJ-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36BM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36SJ-5:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H64M9BM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M9FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M18CFM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M18FM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M18CBM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M18FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18BM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36FM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36BM-33 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H8M36BM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M18BM-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M18CBM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M9BM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H8M36BM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18CSJ-25E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H64M9FM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M18FM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18BM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36FM-25 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H8M36FM-33 TR | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H8M36BM-33:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M9FM-25:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
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MT49H32M18CSJ-25E IT:B Datasheet/PDF