
Allicdata Part #: | MT49H8M36FM-33:BTR-ND |
Manufacturer Part#: |
MT49H8M36FM-33:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 288M PARALLEL 144UBGA |
More Detail: | DRAM Memory IC 288Mb (8M x 36) Parallel 300MHz 20n... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 288Mb (8M x 36) |
Clock Frequency: | 300MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 144-TFBGA |
Supplier Device Package: | 144-µBGA (18.5x11) |
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Memory: MT49H8M36FM-33:B TR Application Field and Working Principle
A significant component of any electronic system is the memory used, which plays a major role in system capacity, speed and the processing efficiency. As such, the type of memory chip chosen is of utmost importance when building a device. Memory chips vary in terms of capacity, power consumption and compatibility with other peripherals of the device. One such type of memory chip is the MT49H8M36FM-33:B TR chip, which is a type of mobile-oriented dual storage system.
MT49H8M36FM-33:B TR chips are designed for use in mobile devices such as smartphones, tablets and wearables. This particular memory chip is designed to provide high levels of performance and power saving while being extremely thin, resulting in a smaller device overall. It makes use of a two-channel architecture, with two different types of memories – Mobile-DDR (Double Data Rate) and Mobile-LPDDR (Low-Power Double Data Rate).
The Mobile-DDR portion of the chip is designed to provide high-performance input/output functions for the device. It makes use of high-speed synchronous DRAM cells, allowing for extremely fast data read and write operations. The Mobile-LPDDR portion is designed to provide a low-power operation mode, allowing the device to run on minimal power while still providing optimal system performance.
The chip also implements an advanced power saving system, allowing it to automatically adjust the memory frequency and voltage level according to the current power requirements of the device. This not only helps to conserve power but also results in better system performance. Additionally, the chip also supports an array of various error correcting codes (ECCs) to ensure reliable data access and storage.
The MT49H8M36FM-33:B TR chip is also designed to provide robust security features. It supports hardware encryption/decryption, secure boot and trusted platform modules (TPMs) to protect the data stored on the chip from unauthorized access. The chip also supports a range of encryption algorithms, including AES (Advanced Encryption Standard), RSA (Rivest-Shamir-Adleman) and SHA (Secure Hashing Algorithm).
All these features make the MT49H8M36FM-33:B TR chip a great choice for any mobile-oriented application. It provides excellent performance and power saving capabilities, offering both high performance and battery life for the device. Additionally, its security features make it an ideal choice for more sensitive applications, such as in financial or medical applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
MT49H16M36FM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H64M9SJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M36SJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M18CTR-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 400... |
MT49H16M18BM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18BM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CBM-25 IT:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36BM-TI:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M36BM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H64M9BM-25:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18SJ-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M36BM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36SJ-5:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H64M9BM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M9FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CFM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CBM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18BM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M36FM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36BM-33 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36BM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M18BM-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CBM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M36BM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M9BM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36BM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18CSJ-25E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H64M9FM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18BM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36FM-25 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36FM-33 TR | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36BM-33:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M9FM-25:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
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