MT49H16M18FM-25 TR Allicdata Electronics
Allicdata Part #:

MT49H16M18FM-25TR-ND

Manufacturer Part#:

MT49H16M18FM-25 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 288M PARALLEL 144UBGA
More Detail: DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20...
DataSheet: MT49H16M18FM-25 TR datasheetMT49H16M18FM-25 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: MT49H16M18
Supplier Device Package: 144-µBGA (18.5x11)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 20ns
Series: --
Clock Frequency: 400MHz
Memory Size: 288Mb (16M x 18)
Technology: DRAM
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT49H16M18FM-25 TR is a double data rate (DDR) synchronous DRAM with a DRAM array that consists of 18M bits and is organized as 16M x 4 banks. It is a high-performance, low-power memory technology that is suitable for various applications. Its advanced architecture and high data rate make it ideal for mobile, embedded and server applications. This article will discuss the application fields of MT49H16M18FM-25 TR and its working principle.

Application Fields

MT49H16M18FM-25 TR is suitable for a wide range of applications that require a high data rate and low power consumption. This includes mobile devices, such as smartphones and tablets, as well as embedded systems and servers. It can also be used in applications that require reliable data storage, such as high-security systems. It is also suitable for gaming and multimedia applications that require a fast response time.

Working Principle

The MT49H16M18FM-25 TR is a DDR synchronous DRAM which operates at a double data rate (DDR). This means that it can send and receive twice the amount of data compared to a single data rate (SDR) DRAM. This increased performance is achieved by sending the data on both the rising and falling edge of the clock signal. This improves performance by halving the access time for each memory access.

The DRAM array consists of 18M bits which are organized as 16M x 4 banks. This means that each bank contains 4M x 16 bits of data. The DRAM also has four lines which are used to access the memory. Each line is labeled A0, A1, A2, A3 and serves a different purpose. The A0 line is used to select the bank being accessed, while the other lines are used to address individual cells within the bank. The A0, A1, A2, A3 lines are also used to issue commands to the DRAM.

The MT49H16M18FM-25 TR also has a self-refresh mode. This mode can be used to reduce power consumption when the memory is not actively being used. When it is enabled, the DRAM will periodically refresh itself in order to maintain the data integrity. This reduces the need for manual refresh cycles which can improve system reliability and power consumption.

The MT49H16M18FM-25 TR is a DDR synchronous DRAM with a DRAM array that consists of 18M bits and is organized as 16M x 4 banks. It is suitable for a wide range of applications that require high data rate and low power consumption. Its high-performance and low-power consumption make it ideal for mobile, embedded, and server applications. Its advanced architecture and features, such as the self-refresh mode, make it an attractive choice for those looking for reliability and performance.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MT49" Included word is 40
Part Number Manufacturer Price Quantity Description
MT49H16M36FM-25:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H64M9SJ-25E:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H16M36SJ-25E:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H16M18CTR-25:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 400...
MT49H16M18BM-18:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H32M18BM-25:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H32M18CBM-25 IT:B Micron Techn... -- 1000 IC DRAM 576M PARALLEL 144...
MT49H8M36BM-TI:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M36BM-25:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H64M9BM-25:B Micron Techn... -- 1000 IC DRAM 576M PARALLEL 144...
MT49H32M18SJ-25E:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H16M36BM-33:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H8M36SJ-5:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H64M9BM-25:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H32M9FM-25:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M18CFM-25:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M18FM-33 TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M18CBM-25:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M18FM-33:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H32M18BM-33:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H16M36FM-25E:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H8M36BM-33 IT:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H8M36BM-33 TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M36BM-25E:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H8M36BM-25E:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H32M18FM-25:B TR Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H16M18BM-25 IT:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M18CBM-25:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M36BM-25 IT:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H32M9BM-25:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H8M36BM-25E:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H32M18CSJ-25E IT:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H64M9FM-25E:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H8M36FM-33:B TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H16M18FM-25 IT:B Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H32M18BM-18:B Micron Techn... 0.0 $ 1000 IC DRAM 576M PARALLEL 144...
MT49H8M36FM-25 TR Micron Techn... 0.0 $ 1000 IC DRAM 288M PARALLEL 144...
MT49H8M36FM-33 TR Micron Techn... -- 1000 IC DRAM 288M PARALLEL 144...
MT49H8M36BM-33:B Micron Techn... -- 1000 IC DRAM 288M PARALLEL 144...
MT49H32M9FM-25:B Micron Techn... -- 1000 IC DRAM 288M PARALLEL 144...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics