
Allicdata Part #: | MT49H16M18FM-25TR-ND |
Manufacturer Part#: |
MT49H16M18FM-25 TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 288M PARALLEL 144UBGA |
More Detail: | DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT49H16M18 |
Supplier Device Package: | 144-µBGA (18.5x11) |
Package / Case: | 144-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 95°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 20ns |
Series: | -- |
Clock Frequency: | 400MHz |
Memory Size: | 288Mb (16M x 18) |
Technology: | DRAM |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MT49H16M18FM-25 TR is a double data rate (DDR) synchronous DRAM with a DRAM array that consists of 18M bits and is organized as 16M x 4 banks. It is a high-performance, low-power memory technology that is suitable for various applications. Its advanced architecture and high data rate make it ideal for mobile, embedded and server applications. This article will discuss the application fields of MT49H16M18FM-25 TR and its working principle.
Application Fields
MT49H16M18FM-25 TR is suitable for a wide range of applications that require a high data rate and low power consumption. This includes mobile devices, such as smartphones and tablets, as well as embedded systems and servers. It can also be used in applications that require reliable data storage, such as high-security systems. It is also suitable for gaming and multimedia applications that require a fast response time.
Working Principle
The MT49H16M18FM-25 TR is a DDR synchronous DRAM which operates at a double data rate (DDR). This means that it can send and receive twice the amount of data compared to a single data rate (SDR) DRAM. This increased performance is achieved by sending the data on both the rising and falling edge of the clock signal. This improves performance by halving the access time for each memory access.
The DRAM array consists of 18M bits which are organized as 16M x 4 banks. This means that each bank contains 4M x 16 bits of data. The DRAM also has four lines which are used to access the memory. Each line is labeled A0, A1, A2, A3 and serves a different purpose. The A0 line is used to select the bank being accessed, while the other lines are used to address individual cells within the bank. The A0, A1, A2, A3 lines are also used to issue commands to the DRAM.
The MT49H16M18FM-25 TR also has a self-refresh mode. This mode can be used to reduce power consumption when the memory is not actively being used. When it is enabled, the DRAM will periodically refresh itself in order to maintain the data integrity. This reduces the need for manual refresh cycles which can improve system reliability and power consumption.
The MT49H16M18FM-25 TR is a DDR synchronous DRAM with a DRAM array that consists of 18M bits and is organized as 16M x 4 banks. It is suitable for a wide range of applications that require high data rate and low power consumption. Its high-performance and low-power consumption make it ideal for mobile, embedded, and server applications. Its advanced architecture and features, such as the self-refresh mode, make it an attractive choice for those looking for reliability and performance.
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Part Number | Manufacturer | Price | Quantity | Description |
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MT49H32M18CBM-25 IT:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
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MT49H32M18SJ-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M36BM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36SJ-5:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H64M9BM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M9FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CFM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CBM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18BM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M36FM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36BM-33 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36BM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M18BM-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CBM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M36BM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M9BM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36BM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18CSJ-25E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H64M9FM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M18BM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H8M36FM-25 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36FM-33 TR | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36BM-33:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M9FM-25:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
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