MT49H32M18BM-25E:B

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Base Part Number:	MT49H32M18
Supplier Device Package:	144-µBGA (18.5x11)
Package / Case:	144-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 95°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	15ns
Series:	--
Clock Frequency:	400MHz
Memory Size:	576Mb (32M x 18)
Technology:	DRAM
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Discontinued at Digi-Key
Packaging:	Bulk

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Memory

The MT49H32M18BM-25E:B is a type of memory. It is a high-density 32M-bit Synchronous DRAM that integrates a double-data-rate (DDR) synchronous interface to provide a high-speed and cost-effective solution for a wide range of applications. This system-on-chip (SoC) memory incorporates an on-chip register array which allows the user to configure various parameters such as burst length, data width, and other features. This is possible without any external component or software. It is used for a variety of applications, including graphics and image processing, video-on-demand systems, personal digital assistants (PDAs), digital still cameras, video gaming consoles, and many others.

The MT49H32M18BM-25E:B is composed of individual memory cells referred to as DDR SRAM cells. Each cell is made up of two switching elements, commonly referred to as transistors, and two storage elements, commonly referred to as capacitors. The cells are arranged in a grid-like array and then connected to the bus via two signal lines, one for writing data and one for reading data. Data transfers occur at a frequency that is determined by the parameters set by the user, allowing for higher speed performance. The on-chip registers provide added flexibility and efficiency that makes the MT49H32M18BM-25E:B a great choice for many applications.

The MT49H32M18BM-25E:B is capable of high-speed operation, thanks to its double-data-rate (DDR) synchronous interface. This feature allows for data to be transferred at double the rate that would occur with a single-data-rate synchronous system. This typically allows for data transfers to occur at 3.2 GHz or higher, depending on the parameters set by the user. The DDR feature also allows for data transfers to occur in an orderly manner, preventing excess signals and noise to interfere with the data transfer rate. This type of memory is very useful in applications that require fast data transfer, such as game consoles and digital video devices.

The MT49H32M18BM-25E:B uses the latest advanced process techniques to achieve the highest performance available. By using the advanced process techniques, the levels of noise and power consumption have been greatly reduced. This allows for very efficient operations and low power consumption, which is important for battery-powered applications. This also makes it ideal for applications that need to operate for a long time without interruption or for applications that must function under high temperatures or other harsh conditions.

Overall, the MT49H32M18BM-25E:B is a powerful memory chip that is well suited for use in a wide variety of applications. Its combination of high speed performance, low noise and power consumption, and easy configuration make it a great choice for any type of application. Its double-data-rate (DDR) synchronous interface also makes it possible to achieve high speed performance in data transfer operations, making it ideal for gaming consoles and digital video devices. The on-chip registers provide added flexibility in parameter configuration, allowing for better performance and efficiency in many applications.

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