![MT49H32M9BM-25:B TR Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MT49H32M9BM-25:BTR-ND |
Manufacturer Part#: |
MT49H32M9BM-25:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 288M PARALLEL 144UBGA |
More Detail: | DRAM Memory IC 288Mb (32M x 9) Parallel 400MHz 20n... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT49H32M9 |
Supplier Device Package: | 144-µBGA (18.5x11) |
Package / Case: | 144-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 95°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 20ns |
Series: | -- |
Clock Frequency: | 400MHz |
Memory Size: | 288Mb (32M x 9) |
Technology: | DRAM |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MemoryOne type of memory that has potential application in many fields is the MT49H32M9BM-25:B TR. This type of memory architecture is dynamic random access memory, or DRAM, that is created using the process geometry of 25nm, giving it incredibly fast speeds. In this article, we will discuss the potential application fields for the MT49H32M9BM-25:B TR and the physics and engineering behind its working principle.
DRAM architecture works through the structure of a capacitor, an insulated electric conductive plate, and a transistor that switch the capacitor on and off rapidly. At the start of each read or write cycle, the transistor opens and allows the plates to instantly fill with charge. These charges are then used to represent one binary value or bit. This operation happens very quickly as the capacitor needs to remain fully charged only for a very short period of time before the transistor can switch it off again. As the technology advances, the plates used in the capacitor become smaller, allowing the timespan used to fill and read the charges to be shorter and the capacity of the chip to be larger.
The MT49H32M9BM-25:B TR is capable of being used in a wide variety of application fields such as gaming, artificial intelligence (AI) and machine learning (ML) as it works incredibly quickly and with great accuracy. This type of memory also finds potential application in graphics processing, as with its small size it allows for greater detail in graphics, as well as lower cost due to its efficiency.
The list of application fields for the MT49H32M9BM-25:B TR is vast as it is so versatile. It is ideal for use in applications that deal with complex calculations as it can transfer and store immense amounts of data with incredible speeds. One application that has been found to be extremely successful with this type of memory is data-intensive research within the fields of biology and chemistry, for example the analysis of the human genome or the development of new drugs.
Moreover, this type of memory can also be beneficial for big data analytics as its architectural design allows for a better utilization of the memory cells with shorter access times, making it quicker to process large datasets. This type of memory is also beneficial for applications such as computer vision as it can store more data quickly as well as be able to process its contents at a faster rate than a traditional hard drive.
The MT49H32M9BM-25:B TR is capable of working faster than its direct competitor DRAM due to the process geometry it is created with. The size of the capacitor is much smaller, allowing it to fill up with charge quickly, accurately, and with very little energy. This makes the MT49H32M9BM-25:B TR much more cost effective and efficient than a traditional DRAM.
In conclusion, the application fields for the MT49H32M9BM-25:B TR are very versatile and can be used for a wide variety of applications. Its architecture works through the combination of a capacitor and transistor, which are both extremely small, allowing it to process large amounts of data with great accuracy and very little energy. Its capabilities make it an invaluable tool for many applications and its versatility makes it perfect for use in many different fields.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MT49H16M18CFM-5 IT | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36FM-5 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36FM-25 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M9FM-25 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36FM-33 TR | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M16FM-5 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 144... |
MT49H8M36BM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-25 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M9FM-33 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M9FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H32M9FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H8M36FM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18BM-5:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18BM-5:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CBM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CFM-25:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CFM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18CFM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M18FM-33:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
MT49H16M36FM-18:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M36FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H16M36FM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CBM-25 IT:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CBM-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CFM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CFM-18:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CFM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CFM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CFM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CFM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CSJ-25E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CSJ-25E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CSJ-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18CSJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
MT49H32M18FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
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