Allicdata Part #: | MT49H8M36BM-25IT:BTR-ND |
Manufacturer Part#: |
MT49H8M36BM-25 IT:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 288M PARALLEL 144UBGA |
More Detail: | DRAM Memory IC 288Mb (8M x 36) Parallel 400MHz 20n... |
DataSheet: | MT49H8M36BM-25 IT:B TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT49H8M36 |
Supplier Device Package: | 144-µBGA (18.5x11) |
Package / Case: | 144-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TA) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 20ns |
Series: | -- |
Clock Frequency: | 400MHz |
Memory Size: | 288Mb (8M x 36) |
Technology: | DRAM |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology is one of the most important components in modern computing. Among them, MT49H8M36BM-25 IT:B TR is a type of dynamic random access memory (DRAM) device applies to high-density memory storage and compute applications. Thus, this article will give an introduction to its application fields and working principle.
Application fields
MT49H8M36BM-25 IT:B TR is mainly used for low-power devices and can help to reduce the size of memory modules. As a high-density memory device, it is widely used in wearable devices and IoT (Internet of Things) devices. Besides, since this type of DRAM device has low power consumption, more and more people choose it in their system architecture.
In addition to wearable and IOT devices, MT49H8M36BM-25 IT:B TR is used to improve the performance of computers and many other embedded systems. As an example, it can enhance the performance of voice activated systems and make them respond faster.
Working Principle
MT49H8M36BM-25 IT:B TR is a type of DRAM which stands for Dynamic Random Access Memory. It contains memory cells where stored data is represented by features like voltage level or electric charge. Additionally, the stored data information is arranged in an array form, which helps to access data faster.
The working principle of MT49H8M36BM-25 IT:B TR is based on two distinct stages: writing data and reading data. When writing data, the device charges the memory cells according to the voltage input. During reading data, the device accesses the data information by discharging the cells. Therefore, data stored in the memory cells will be accessed and read in an efficient way.
One of the main advantages of MT49H8M36BM-25 IT:B TR is the flexibility. When compared to other types of DRAM, it can be installed in a shorter amount of time and provide better data capabilities and higher data rates.
Conclusion
In conclusion, MT49H8M36BM-25 IT:B TR is a type of DRAM device that is widely used in low-power devices such as wearables and IOT devices. Its working principle is based on charging and discharging memory cells in order to process data. Finally, its flexibility makes it a very suitable tool for different architectures and applications.
The specific data is subject to PDF, and the above content is for reference
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