MT49H8M36BM-33:B TR

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Memory: MT49H8M36BM-33:B TR Application Field and Working Principle

Memory is an important part of modern electronic devices, and one of the key components of electronic systems. The MT49H8M36BM-33:B TR is a high-speed, low-power dynamic RAM (DRAM) developed and manufactured by Toshiba Memory Corporation. This section describes the application field and working principle of the MT49H8M36BM-33:B TR.

Application field

The MT49H8M36BM-33:B TR dynamic RAM is mainly used in the following application fields: digital products, telecommunication equipment, automotive, and entertainment systems. The use of this DRAM in these application fields provides several advantages, including low power consumption, high performance, low signal noise, and an extended temperature range. Because of these properties, the MT49H8M36BM-33:B TR DRAM is suitable for use in a variety of digital products, telecommunication equipment, and other systems.

Working principle

The MT49H8M36BM-33:B TR DRAM is a type of synchronous dynamic RAM that uses dynamic storage elements. In this type of memory, the state of any memory cell is defined by a set of bitlines that keep track of the logic state of the memory cell. The memory cell consists of a data storage capacitor and a MOS transistor that connects the capacitor to a set of bitlines. During a read operation, the address is decoded and the corresponding bitlines are selected. The bitlines then “sense” the voltage stored on the capacitor and the data is read out. During a write operation, the bitlines are selected, and the data is written to the capacitor.

The MT49H8M36BM-33:B TR DRAM also employs a method called “refresh” cycle to retain the data stored in the memory cells. The refresh cycle must be carried out periodically to maintain the charge on the memory cell\'s capacitor. The refresh cycle consists of initiating a refresh operation, which reads out the data from the memory cells and rewrites it back. This process is repeated until all the cells are refreshed and the data is retained.

In conclusion, the MT49H8M36BM-33:B TR DRAM is a type of high-speed, low-power dynamic RAM suitable for a variety of digital products, telecommunication equipment, automotive and entertainment systems. Its working principle is based on a set of bitlines, data storage capacitors and transistors that link the bitlines and capacitors. The MT49H8M36BM-33:B TR DRAM also uses a refresh cycle to retain the data stored in the memory cells.

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