MT49H8M36BM-33 IT:B TR

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The MT49H8M36B(M)-33 IT:B TR is a memory device based on NAND Flash technology. It is a high intra-bank read/write cycle, small physical size, and low power consumption memory device that is ideal for applications requiring frequent reads and writes of data.

The MT49H8M36B(M)-33 IT:B TR is comprised of 16Mx36 banks and consists of 2048 gigabits (Gbits) of NAND Flash memory. It has an interface speed of 66 MHz and utilizes Channel-2-DQS interface protocol to deliver data on 32-bit wide data bus. The MT49H8M36B(M)-33 IT:B TR device supports Cyclic Redundancy Check (CRC) for enhanced reliability and is compliant with the Joint Test Action Group (JTAG) standards.

The memory device has an operating voltage range of 1.8V to 3.3V and features automatic power-down to reduce power consumption. The MT49H8M36B(M)-33 IT:B TR has a rated write cycle endurance of 500 hundred thousand (500k) cycles and is offered in 48 Pin TSOP package with a maximum temperature of 85°C.

The MT49H8M36B(M)-33 IT:B TR can be used in a wide variety of applications including automotive, industrial, embedded, and consumer. It is often used in applications requiring large amount of data storage, such as factory automation, vehicle navigation, and hand-held terminals. It is popular in mobile phones, gaming consoles, and digital cameras. Some industrial applications include data logging, medical equipment, and industrial control.

The working principle of the MT49H8M36B(M)-33 IT:B TR is based on NAND Flash technology. NAND Flash memory uses a floating gate storage element for non-volatile storage. When a voltage is applied to the floating gate, electrons are trapped by the floating gate and stored, thus creating a cell which is non-volatile. The memory cells on the MT49H8M36B(M)-33 IT:B TR are organized into banks with 8bit bus interface.

The MT49H8M36B(M)-33 IT:B TR utilizes the channel-2-DQS interface protocol which uses a 16Gb device architecture and includes Error Correcting Code (ECC) for improved data integrity. The device supports a burst length up to 16 and its data output can be inverted by control signal. The NAND Flash technology used in the MT49H8M36B(M)-33 IT:B TR allows it to have a high intra-bank read/write cycle and consume low power while providing high density and cost-effectiveness.

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