MT52L256M64D2PD-107 XT ES:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	16Gb (256M x 64)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.2V
Operating Temperature:	--

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Introduction to Memory MT52L256M64D2PD-107 XT ES:B TR

Memory is the most important and integral part of any computer system. It is responsible for storing information and data, and without it, any digital device would be pretty much useless. The demand for memory is increasing day by day, and various types of memory technologies have been developed over the years, such as DRAM, SRAM, and Flash Memory, to meet this high demand. The MT52L256M64D2PD-107 XT ES:B TR is a type of memory module, which is manufactured by Atmel, a leading semiconductor and microcontroller manufacturer. This memory is a double-data-rate synchronous dynamic random access memory (DDR SDRAM), and is used in a variety of electronic devices, ranging from laptops, gaming consoles, and smartphones, to industrial and automotive applications.

Application Fields

The MT52L256M64D2PD-107 XT ES:B TR is a high-speed, low-power DDR3 SDRAM module, which is electrically and mechanically compatible with 1.5V and 1.35V SODIMM DDR3 SDRAM modules. The module is also fully compliant with the JEDEC standard, making it suitable for use in a wide range of electronic applications. The module is typically used in applications, such as laptops, tablets, and gaming devices, where maximum efficiency and durability are required. Additionally, the MT52L256M64D2PD-107 XT ES:B TR is also extremely popular in industrial and automotive applications, such as robots and autonomous vehicles, due to its low power consumption and excellent performance. Moreover, the module is also perfect for use in embedded applications, due to its low form factor and cost-effectiveness.

Major Features of the MT52L256M64D2PD-107 XT ES:B TR Memory Module

The MT52L256M64D2PD-107 XT ES:B TR memory module is designed to offer superior performance, with a clock frequency of 1066 MHz, and a CAS Latency of 9. The module also has a low power consumption, with a 1.5V operating voltage, and a 0.7W power dissipation per module. Additionally, the MT52L256M64D2PD-107 XT ES:B TR is capable of handling 258 million transactions per second, and an effective data transfer rate of 8500Mb/s, making it exceptionally fast.

Working Principle

The MT52L256M64D2PD-107 XT ES:B TR is a doubler data rate synchronous dynamic random access memory (DDR SDRAM) module, and its working principle is based on the idea of refreshing memory cells periodically, in order to preserve their state. The module uses a single clock signal to control the timing of read, write, and refresh operations. A clock signal is generated at a frequency of 1066 MHz (which corresponds to a CAS Latency of 9), and is used to control the transfer rate of data. This ensures that data is transferred between the module’s memory cells quickly and efficiently.The module also uses a memory interface bus to control the data transfer process. The interface bus is responsible for controlling the bus width, bus speed, and addressing range, so that data can be transferred between the module’s memory cells. The bus works in parallel with the single clock signal in order to efficiently transfer data between the different cells, and the module can handle up to 256 megabits of data in a single transfer.

Conclusion

The MT52L256M64D2PD-107 XT ES:B TR is a high-speed, low-power DDR3 SDRAM module, which is used in a wide range of electronic applications, such as laptops, gaming consoles, and embedded applications. The module operates on a single clock signal, which is responsible for controlling the timing of read, write, and refresh operations. Additionally, the module is also equipped with a memory interface bus, which is used for controlling the bus width, bus speed, and addressing range for efficient data transfer. The module is capable of handling 258 million transactions per second, and an effective data transfer rate of 8500Mb/s, making it an ideal choice for any application that requires reliable and high-speed memory.

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