MT52L768M32D3PU-107 WT ES:B TR Allicdata Electronics
Allicdata Part #:

MT52L768M32D3PU-107WTES:BTR-ND

Manufacturer Part#:

MT52L768M32D3PU-107 WT ES:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 24G 933MHZ 168WFBGA
More Detail: SDRAM - Mobile LPDDR3 Memory IC 24Gb (768M x 32) ...
DataSheet: MT52L768M32D3PU-107 WT ES:B TR datasheetMT52L768M32D3PU-107 WT ES:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 24Gb (768M x 32)
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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Memory is a vital component of any computer system. In modern times, there has been an increase in the usage of memories, especially in the form of semiconductor memories. These memories can be volatile (temporary) or non-volatile (permanent). The role of memories is to store data, intermediate results, and programs. The MT52L768M32D3PU-107 WT ES:B TR is a non-volatile memory chip from Micron Technology used in a wide range of applications. This article discusses the application fields and working principle of the MT52L768M32D3PU-107 WT ES:B TR.
The MT52L768M32D3PU-107 WT ES:B TR is a 3.3V 16Mb (2M x 8) Asynchronous SRAM. The memory chip is available in multiple packages such as 44-ball CSP, 48-ball VFBGA, 48-ball CSP, and 48-pin TSOP II. It can provide an access time of 10ns (max.). The MT52L768M32D3PU-107 WT ES:B TR features an endurance rating of 10,000 cycles (min) and is available in power-down option for extended battery life.
The MT52L768M32D3PU-107 WT ES:B TR is suitable for a wide range of applications such as voice recording, data logging, and media streaming. It is also used as a backup memory in mission critical applications such as aviation and military systems. The memory chip is also becoming increasingly popular in automotive industries, where it is used for navigation, in-vehicle entertainment, and electronic control unit (ECU) applications.
The working principle of the MT52L768M32D3PU-107 WT ES:B TR is centered around the principle of capacitors, transistors, and resistors. The chip is designed in a way that it supports multiple data frequencies such as 25MHz and 16MHz. As it is a non-volatile memory chip, it can retain its content even after power down.The MT52L768M32D3PU-107 WT ES:B TR also includes an internal write protect (WE#) pin along with a second software write protect pin (WEN#) so that external management systems can be used to write protect the memory.
The MT52L768M32D3PU-107 WT ES:B TR also provides an array of read/write features such as single-byte, char, and word reads and writes. It also has multiple data bus widths such as 8-bit, 16-bit, and 32-bit and supports various operating temperature ranges such as 0 to 70 ℃, -40 to 85 ℃, and -55 to 125 ℃. All these features, along with its high speed and low power consumption, make the MT52L768M32D3PU-107 WT ES:B TR an ideal choice for a range of applications.
To summarize, the MT52L768M32D3PU-107 WT ES:B TR is a 3.3V 16Mb non-volatile SRAM from Micron Technology. The non-volatile nature of the memory chip makes it suitable for applications that require data retention after power-down. The chip is used in a variety of application fields such as aviation, military, automotive, voice recording, data logging, and media streaming. The working principle of the MT52L768M32D3PU-107 WT ES:B TR revolves around the principles of capacitors, transistors, and resistors. It features an array of features such as multiple data bus widths, write protect pins, and an operating temperature range of -40 to 85 ℃. All these advantages make the MT52L768M32D3PU-107 WT ES:B TR an ideal choice when it comes to selecting a memory chip for an application.

The specific data is subject to PDF, and the above content is for reference

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