MT52L256M32D1PH-107 WT ES:B TR Allicdata Electronics
Allicdata Part #:

MT52L256M32D1PH-107WTES:BTR-ND

Manufacturer Part#:

MT52L256M32D1PH-107 WT ES:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 8G 933MHZ FBGA
More Detail: SDRAM - Mobile LPDDR3 Memory IC 8Gb (256M x 32) 9...
DataSheet: MT52L256M32D1PH-107 WT ES:B TR datasheetMT52L256M32D1PH-107 WT ES:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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Memory is an essential part of computing devices, so choosing the right memory is essential if you want to get the most out of your device. The Micron MT52L256M32D1PH-107 WT ES:B TR is an excellent choice for a wide range of applications. This article will discuss the application field and the working principle of this device.

The MT52L256M32D1PH-107 WT ES:B TR is a 32Mb memory device from Micron Technology. It has a small footprint, making it suitable for applications where space is a concern. It is a double data rate (DDR) Dynamic Random Access Memory (DRAM), which means it can transfer twice the data per clock cycle compared to a conventional SDRAM. It has an address/control bus width of 16-bits and a data bus of 32-bits. It is also capable of simultaneous read and write operations and supports burst transfers at a maximum frequency of 133MHz.

The MT52L256M32D1PH-107 WT ES:B TR is especially suitable for applications where you need a large amount of memory. It can be used in desktop PCs, laptops, servers and embedded systems. It can also be used in set-top boxes, gaming consoles, digital TVs and portable media players. It is also a good choice for communications and networking applications such as routers, switches and hubs.

The working principle of the MT52L256M32D1PH-107 WT ES:B TR is based on DRAM technology. DRAM chips store data as electrical charges in an array of capacitors. When data is written to a DRAM cell, an electrical charge is stored on the capacitors. When the cell is read, the charge is detected and interpreted as a binary value. This type of memory is volatile, which means it will require periodic refreshes in order to maintain its contents.

The MT52L256M32D1PH-107 WT ES:B TR is a reliable and energy-efficient memory solution. It is easy to use and configure, making it a great choice for a wide range of applications. Its DDR capability provides the capability of high-speed transfer rates, making it an ideal choice for high-performance applications. It is also a good choice for cost-sensitive applications where you don’t want to sacrifice speed for a more cost-effective memory solution.

In conclusion, the Micron MT52L256M32D1PH-107 WT ES:B TR is an excellent choice for a wide range of applications. It has a small footprint and is capable of high-speed transfers. Its DDR technology makes it energy-efficient and reliable. It is also easy to use and configure. All of these features make the MT52L256M32D1PH-107 WT ES:B TR a great choice for any application requiring a large amount of memory.

The specific data is subject to PDF, and the above content is for reference

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