![MT52L256M32D1PH-107 WT ES:B TR Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MT52L256M32D1PH-107WTES:BTR-ND |
Manufacturer Part#: |
MT52L256M32D1PH-107 WT ES:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G 933MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 8Gb (256M x 32) 9... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.2V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory is an essential part of computing devices, so choosing the right memory is essential if you want to get the most out of your device. The Micron MT52L256M32D1PH-107 WT ES:B TR is an excellent choice for a wide range of applications. This article will discuss the application field and the working principle of this device.
The MT52L256M32D1PH-107 WT ES:B TR is a 32Mb memory device from Micron Technology. It has a small footprint, making it suitable for applications where space is a concern. It is a double data rate (DDR) Dynamic Random Access Memory (DRAM), which means it can transfer twice the data per clock cycle compared to a conventional SDRAM. It has an address/control bus width of 16-bits and a data bus of 32-bits. It is also capable of simultaneous read and write operations and supports burst transfers at a maximum frequency of 133MHz.
The MT52L256M32D1PH-107 WT ES:B TR is especially suitable for applications where you need a large amount of memory. It can be used in desktop PCs, laptops, servers and embedded systems. It can also be used in set-top boxes, gaming consoles, digital TVs and portable media players. It is also a good choice for communications and networking applications such as routers, switches and hubs.
The working principle of the MT52L256M32D1PH-107 WT ES:B TR is based on DRAM technology. DRAM chips store data as electrical charges in an array of capacitors. When data is written to a DRAM cell, an electrical charge is stored on the capacitors. When the cell is read, the charge is detected and interpreted as a binary value. This type of memory is volatile, which means it will require periodic refreshes in order to maintain its contents.
The MT52L256M32D1PH-107 WT ES:B TR is a reliable and energy-efficient memory solution. It is easy to use and configure, making it a great choice for a wide range of applications. Its DDR capability provides the capability of high-speed transfer rates, making it an ideal choice for high-performance applications. It is also a good choice for cost-sensitive applications where you don’t want to sacrifice speed for a more cost-effective memory solution.
In conclusion, the Micron MT52L256M32D1PH-107 WT ES:B TR is an excellent choice for a wide range of applications. It has a small footprint and is capable of high-speed transfers. Its DDR technology makes it energy-efficient and reliable. It is also easy to use and configure. All of these features make the MT52L256M32D1PH-107 WT ES:B TR a great choice for any application requiring a large amount of memory.
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