Allicdata Part #: | MT52L256M64D2PD-107WT:BTR-ND |
Manufacturer Part#: |
MT52L256M64D2PD-107 WT:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 933MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 16Gb (256M x 64) ... |
DataSheet: | MT52L256M64D2PD-107 WT:B TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.2V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a multifaceted component which is essential for a wide range of applications, from consumer electronics and automobiles to energy development an industrial automation. The MT52L256M64D2PD-107WT:B TR is a memory component used for various applications and embodiments.
The main features of the MT52L256M64D2PD-107WT:B TR\'s memory component include its 256 megabit (Mb), DDR2 SDRAM chip with a double-data rate of two-layer transfer. It can operate in SDR and DDR architectures at an operating frequency of 800 and 1066 MHz, respectively. Furthermore, it is designed to operate at an approximate 1.8 V VDDQ, and an approximate 1.2 V VDD supply voltage. In addition, temperature supported by the component is -40 to +85 °C.
The MT52L256M64D2PD-107WT:B TR memory component is primarily used for data-intensive applications including gaming platforms, embedded applications such as real-time multimedia and consumer electronics. In addition, it is also used in automotive and other consumer-grade products, and computer, communications and commercial systems.
When it comes to operational efficiency, the component offers reliable data processing speeds, as well as efficient power management and quicker access times. In fact, the component’s fast operating frequency helps in speeding up data processing and other related operations. Furthermore, the component\'s low-power requirements mean that it has a lower power dissipation, which is important for the efficient functioning of hardware equipment.
The MT52L256M64D2PD-107WT:B TR component is built using an advanced technology which enables it to offer high speeds and data accesses while consuming less power. The component also features a differential clock-signal path which helps in reducing noise levels and interference. Moreover, the component is designed with a flexible and easy-to-use architecture which offers flexibility in control and configuration.
The MT52L256M64D2PD-107WT:B TR\'s working principle is based on the SDRAM chip\'s ability to read and write data in parallel. This enables it to access the data faster and efficiently. In addition, the chip\'s dynamic data rate allows for high-speed data transfer. Also, the component’s clock-signal path eliminates noise and interference, thereby ensuring consistent and reliable operation.
The MT52L256M64D2PD-107WT:B TR is an ideal solution for applications that require intense data processing, fast access time, and low power consumption. Its robust and reliable performance will provide reliable memory functions in the most demanding environments. It will similarly provide ease of control and flexibility in configuration, while providing a cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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MT52L256M64D2PD-107 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 933MHZ FBGASD... |
MT52L256M64D2PD-107 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 933MHZ FBGASD... |
MT52L256M64D2PD-107 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 933MHZ FBGASD... |
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