MT52L256M64D2PD-107 XT:B TR

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Memory technology has steered the development of information technology and plays an important role in devices with high memory storage capacity. The MT52L256M64D2PD-107 XT:B TR is a high-performance memory device manufactured by Micron Technology, Inc. It is comprised of 256 Megabyte of random access memory, referred to as DRAM. The device operates with a voltage of 1.8V and is used in a variety of electronic devices, including laptop and desktop PCs, servers, and embedded systems.

The MT52L256M64D2PD-107 XT:B TR consists of sixty-four 8 Megabyte DDR3 SDRAM components in a single package. It is a x72 component device constructed in an 8by8 ball grid array (BGA) form factor and is capable of running at a frequency of 533MHz. It supports sixteen bit Double Data Rate (DDR3) for a total transfer rate of 1600MT/sec. The device adopts the JEDEC standard and is compliant to the latest standard specifications for the DDR3-1600 devices.

The primary application field for the MT52L256M64D2PD-107 XT:B TR device is used in applications that require high bandwidth and reliable data storage. The device is suitable for use in applications such as high-performance computing, embedded systems, and server storage. The device has high scalability, low-power consumption and a wide temperature range, making it ideal for challenging computing and storage tasks.

In terms of working principle, the MT52L256M64D2PD-107 XT:B TR device is based on the principle of Dynamic Random Access Memory (DRAM). The device stores data as electric charges on microscopic capacitors located on a semiconductor chip. Each row in the device is connected to a sense amplifier which is responsible for current/voltage output. When data is required to be written to the memory, the information is brought to the chip’s input/output pads and then stored in the capacitors. When we need to access the stored information, it is passed through the sense amplifier which sends an electric signal that triggers a memory cell in the device. The data is then read from the cell and outputted from the device’s pads.

The MT52L256M64D2PD-107 XT:B TR is a high-performance memory device that offers a high level of performance and reliability. It is ideal for challenging applications such as high-performance computing, embedded systems, and enterprise storage. The device is designed to operate with a voltage of 1.8V and has a maximum frequency of 533MHz. It supports sixteen bit Double Data Rate (DDR3) and has a total transfer rate of 1600MT/sec. It is a x72 component device constructed in a 8by8 ball grid array (BGA) form factor and is compliant to the JEDEC standard for DDR3-1600 devices.

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