Allicdata Part #: | MT52L512M64D4GN-107WT:BTR-ND |
Manufacturer Part#: |
MT52L512M64D4GN-107 WT:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 32G 933MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 32Gb (512M x 64) ... |
DataSheet: | MT52L512M64D4GN-107 WT:B TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 32Gb (512M x 64) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.2V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory: MT52L512M64D4GN-107 WT:B TR Application Field and Working Principle
MT52L512M64D4GN-107 WT:B TR is a new type of memory created by Toshiba and applied to the data storage field. This type of memory is made up of dynamic random access memory (DRAM) modules and is considered a major breakthrough in DRAM applications.
Components of MT52L512M64D4GN-107 WT:B TR
MT52L512M64D4GN-107 WT:B TR is composed of two distinct components: a controller and a memory chip. The memory chip is made up of 512-megabyte memory cells, each of which is able to store data. The controller is responsible for retrieving and storing data in the appropriate memory cell. The controller also controls the timing of data retrieval, enabling the user to quickly access data stored in the memory.
Working Principle of MT52L512M64D4GN-107 WT:B TR
The working principle of MT52L512M64D4GN-107 WT:B TR is based on the concept of memory mapping. In this system, each memory cell is assigned a unique address, and the controller is programmed to access the memory cell when a certain address is passed. This allows the user to quickly locate the data stored in the memory chip, as the controller is programmed to access the memory cell. The user can also configure the controller to retrieve the data stored in the particular memory cell.
The controller of MT52L512M64D4GN-107 WT:B TR is also responsible for controlling the refresh rate of the memory. This is done by forcing the controller to refresh each memory cell periodically. This keeps the user from having to manually refresh each individual memory cell every time they would need to access the data stored in it. It also helps ensure that data stored in the memory is not lost due to power outages or similar occurrences.
Advantages of MT52L512M64D4GN-107 WT:B TR
MT52L512M64D4GN-107 WT:B TR offers numerous advantages to the user. Its ability to rapidly access data ensures that the user can access the data they require quickly. This enables the user to quickly process requests and to retrieve data more efficiently. It also offers high-density storage which is more economical and efficient in terms of costs for the user. Additionally, its ability to automatically refresh memory cells means that the user does not have to manually do so every time they need to access the data stored in it.
Applications of MT52L512M64D4GN-107 WT:B TR
The most common application of MT52L512M64D4GN-107 WT:B TR is in data storage. It is particularly popular amongst those who need to access large amounts of data quickly. It is used in the computer, telecommunications and networking industries, as well as many other applications where rapid data access is a requirement. It is particularly useful in situations where data must be accessed and stored quickly, such as in the design and development of complex software.
It is also used in the field of advanced analytics, where massive amounts of data must be processed quickly. By using the memory\'s ability to quickly access data and store it in specific memory cells, large amounts of data can be quickly analyzed and stored, making the process more efficient. In addition, it is used in the entertainment industry, particularly for accessing and storing large amounts of images and videos quickly.
Conclusion
MT52L512M64D4GN-107 WT:B TR is a type of memory composed of dynamic random access memory (DRAM) modules. It works on the principle of memory mapping, wherein each memory cell is assigned a unique address and the controller is programmed to access the memory cell when the appropriate address is passed. This memory offers numerous advantages to the user, including rapid access to data and high-density storage. It is most commonly used in the computer, telecommunications and networking industries, as well as many other applications.
The specific data is subject to PDF, and the above content is for reference
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MT52L256M64D2PD-107 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 933MHZ FBGASD... |
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