MT52L768M32D3PU-107 WT:B TR

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Memory: MT52L768M32D3PU-107 WT:B TR Application Field and Working Principle

MT52L768M32D3PU-107 WT:B TR is a type of memory that offers advanced processes, performance and integrated features. Compared to conventional memory solutions, it provides substantial savings in terms of cost and power consumption. MT52L768M32D3PU-107 WT:B TR is widely used in automotive applications, consumer electronics, computer networking, and embedded systems.

Specifically, MT52L768M32D3PU-107 WT:B TR memory is designed for high-speed, random-accessed, single-port low-power operation. It is a Low-Power DDR3 that optimizes power savings in mobile systems, consumer electronics, and any type of applications. The device performs at up to 1600 megabits per second (Mbps), and supports mobile specification Adaptive Self Refresh (ASR), Partial Array Self Refresh (PASR), and Self Refresh to Reduce Power Consumption (SR). These features improve overall system power performance and reduce system power consumption. Furthermore, the MT52L768M32D3PU-107 WT:B TR supports the very low and low latency mode (VF and LF) enabling the user to optimize and manage the latency of the entire system.

Moreover, MT52L768M32D3PU-107 WT:B TR works at low voltage, 1.2 V and 1.35 V, making it ideal for use in low power embedded systems. This low power consumption also helps reduce PCB area and reduces the need for more power-hungry components. The device has a maximum peak power of 5.2 W, which is substantially lower than the standard memory peak power of 8.5 W. This helps reduce the overall power consumed by the system.

The MT52L768M32D3PU-107 WT:B TR has a 32-bit data bus, support for 16 banks of 256 megabits each, and a maximum storage capacity of 4 gigabytes (GB). It provides an effective data rate of 1600 Mbps, and also supports burst transfer rates up to 2800 MT/s. Additionally, the device features a unique memory system architecture and employs a 4KB page size to minimize write latency. This reduces system power consumption while increasing performance.

In addition, the device offers several advanced features such as error correction code (ECC), low power self-refresh (LPSR), data scrambler, register write protection, and optimized burst transfer sequencing. These features ensure data integrity, reliability, and long lasting performance in a wide range of applications. The device is also capable of self-refresh on power loss, offering additional security and support for mission critical applications.

Overall, the MT52L768M32D3PU-107 WT:B TR is an advanced memory solution that provides superior performance, reliability, and integration for a wide range of applications. Its low power requirements and advanced features make it ideal for automotive, consumer electronics, networking, and embedded systems.

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