| Allicdata Part #: | MT53B2DBDS-DC-ND |
| Manufacturer Part#: |
MT53B2DBDS-DC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC SDRAM LPDDR4 6GBIT ?? NA DDP |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC |
| DataSheet: | MT53B2DBDS-DC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
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MT53B2DBDS-DC is a series of products from the Memory range from CSR (Chip Scale Review) Technology. This series of memory is designed for applications where data to be stored and managed quickly and efficiently. It is a type of non-volatile memory, meaning that it will continue to store data even when the power is switched off.
The MT53B2DBDS-DC series is used in a range of applications, from embedded systems, such as those found in computer chips, to communication and audio-visual systems, such as those used in the automotive and home entertainment industries. It is also a key component in medical, entertainment, industrial and aerospace systems.
The working principle of the MT53B2DBDS-DC series memory is based on non-volatile flash memory technology. This technology uses one or more bits, or cells, that can be set to a 0 or 1 to store data. This type of memory is intrinsically faster than conventional hard drives because there is no need to move the arm which reads or writes data.
At the heart of the memory, is a memory controller, or MCU. This is a single-chip integrated circuit that controls the flow of data within the system. It is responsible for the read and write command execution and for providing diagnostic feedback on the data stored. The MCU also monitors the voltage levels necessary for the proper functioning of the memory, as well as for the security and integrity of the data.
The MT53B2DBDS-DC memory utilizes an advanced write-protection feature and an SEL (Security Ears-Language) command that allows high level access control. This ensures that data stored in the memory is secure and cannot be accessed by unauthorized personnel. In addition, the memory integrates error-correcting code (ECC) capabilities, which allows for fast and reliable data storage and retrieval.
The MT53B2DBDS-DC series memory also features a low standby power rating that saves power and increases battery life in mobile applications. The memory also has a very fast read and write time, allowing data to be transfered in a fraction of a second.
In a nutshell, the MT53B2DBDS-DC series memory from CSR Technology is a fast, reliable and secure type of memory that is ideal for use in various applications. It is fast, efficient and can store large amounts of data within a short period of time. The low power rating also makes it a great choice for mobile applications where battery life is of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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| MT53D512M32D2DS-053 AIT:D | Micron Techn... | -- | 1000 | IC DRAM 16G 1866MHZSDRAM ... |
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| MT53B256M64D2TP-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B128M32D1NP-062 WT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
| MT53B512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53D384M32D2DS-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M32D4DT-046 AAT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
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| MT53D512M64D4NZ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53B768M32D4NQ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D256M64D4NY-046 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D512M64D4NW-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
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| MT53B512M64D4NK-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
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| MT53D256M64D4KA-046 XT:ES B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D4SQ-046 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA W... |
| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... |
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
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MT53B2DBDS-DC Datasheet/PDF