MT53B256M32D1GZ-062 WT:B

Series:	--
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	8Gb (256M x 32)
Clock Frequency:	1600MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 85°C (TC)

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Introduction

Memory is an extremely important element in most electronic systems, and is often required for storing and accessing frequently used data. The MT53B256M32D1GZ-062 WT:B is a dynamic random access memory (DRAM) that is designed to meet the high speed requirements of today’s applications. It is an ideal solution for server applications. In this article, we will discuss the application field and working principle of the MT53B256M32D1GZ-062 WT:B memory.

Application Field

The MT53B256M32D1GZ-062 WT:B memory has a wide range of applications. It is commonly used in servers, desktops, graphics cards, networking, high performance computing, and other advanced applications. It is also used in embedded systems such as tablets, smart phones, and automotive systems. Due to its fast operating speed and low power consumption, the MT53B256M32D1GZ-062 WT:B is suitable for applications that require high performance and efficiency.

Architecture

The MT53B256M32D1GZ-062 WT:B memory features a 4X4 organization of 256-Mbit dynamic random access memory (DRAM) chips organized into 28 independent clusters of 512Mbits. Each cluster comprises 16 individual 512Mbit DRAM chips, for a total of 448Mbits. The memory also features a controller to enable efficient operations.

Working Principle

The MT53B256M32D1GZ-062 WT:B memory works on the principle of dynamic RAM (DRAM). This type of memory uses capacitors to store information as binary bits. When the capacitor is charged, it stores a binary 1, while when it is discharged, it stores a binary 0. The DRAM cell is connected to a row and column, and the memory is accessed by charging and discharging the capacitors. The MT53B256M32D1GZ-062 WT:B memory also features an on-die termination circuit to reduce noise and improve signal integrity. This circuit applies a resistor across the memory bus, which helps reduce reflections and signal attenuation.

Conclusion

The MT53B256M32D1GZ-062 WT:B memory is an advanced dynamic random access memory (DRAM) that is suitable for high performance applications. It is commonly used in servers, desktops, networking, graphics cards, and other applications. It is organized into 28 clusters of 512Mbits, and features an on-die termination circuit for improved signal integrity. The memory works on the principle of DRAM, which uses capacitors to store data as binary bits.

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