| Allicdata Part #: | MT53D384M64D4FL-046XT:E-ND |
| Manufacturer Part#: |
MT53D384M64D4FL-046 XT:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | LPDDR4 24G 384MX64 FBGA XT QDP |
| More Detail: | Memory IC |
| DataSheet: | MT53D384M64D4FL-046 XT:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Active |
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Memory is one of the most important components in any electronic system. The ability to store and quickly retrieve data is key in order to perform calculations and other tasks. One of the memory technologies that is widely used in applications today is MT53D384M64D4FL-046 XT:E. The technology is used in a variety of different applications and the following provides an overview of the technology and explains its working principle.
MT53D384M64D4FL-046 XT:E application field
MT53D384M64D4FL-046 XT:E is a type of dynamic random access memory (DRAM). The technology is used mainly in high-end computers and workstations. The technology is also used in many embedded devices such as mobile phones, game consoles, cameras, and other digital devices. The technology is well suited for applications that require a large amount of memory, such as image processing and video streaming. In addition, the technology is often used in servers and enterprise systems, as well as AI-related applications.
The technology is also used in military and aerospace applications, due to its low power requirements and its ability to withstand harsh environments. It is also used in medical, automotive, and telecommunications applications, where it is used to store large amounts of data. In addition, the technology is often used in data centers, where it is used to store large databases.
MT53D384M64D4FL-046 XT:E Working Principle
MT53D384M64D4FL-046 XT:E is a type of DRAM that is made up of multiple transistors, capacitors, and other components. The technology uses an addressing system that allows the system to access data from different locations in the memory at the same time. This addressing system enables the system to quickly access data from large amounts of memory without having to wait for data to be read from a single location.
The technology also uses an array of memory cells that are interconnected in order to form a matrix. The matrix is connected to a controller that is responsible for controlling the flow of data. The controller receives commands from the system, which instructs it on which memory location to access. Once the memory location has been identified, the controller sends the required data to the appropriate locations.
MT53D384M64D4FL-046 XT:E is a DDR3 technology that provides fast random access speeds, which enable it to quickly access and store large amounts of data. The technology is also reliable and can withstand extreme temperatures and other harsh environments. In addition, the technology is energy efficient and provides low power requirements, making it well-suited for a variety of applications.
Conclusion
The MT53D384M64D4FL-046 XT:E technology is a type of dynamic random access memory (DRAM) that is used in a wide array of applications. The technology uses an addressing system to access different locations in the memory at the same time and an array of memory cells that are interconnected to form a matrix. The technology is also energy efficient and provides low power requirements, making it well suited for applications that require large amounts of data, such as image processing and video streaming.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT53B384M32D2DS-062 AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1600MHZSDRAM ... |
| MT53B512M32D2NP-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1866MHZSDRAM ... |
| MT53B1024M64D8WF-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZSDRAM ... |
| MT53B4DBDT-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53H7BWS5 | 3M | 304.06 $ | 1000 | 3M PELTOR WS COMMUNICATI |
| MT53B128M32D1NP-062 AAT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
| MT53D4DBBP-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53B1DATG-DC | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8GSDRAM - Mobile L... |
| MT53B768M64D8NK-053 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M32D1GZ-062 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ FBGASD... |
| MT53B512M32D2DS-062 AIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53B512M64D8HR-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZSDRAM ... |
| MT53D768M64D8WF-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M64D2NV-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B384M32D2NP-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D512M32D2DS-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1024M32D4DT-053 AAT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B384M16D1NK-062 WT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 6G 1600MHZ FBGASD... |
| MT53D2DADS-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT53B256M64D2NK-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53D384M64D4FL-046 XT:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 24G 384MX64 FBGA X... |
| MT53D256M64D4NY-046 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D8JS-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53D8DBNZ-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5385-UV | Marktech Opt... | 2.87 $ | 142 | EMITTER UV 385NM 5MM RADI... |
| MT53B384M64D4NK-053 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53B1G32D4NQ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 32G 1GX32 FBGA QDP... |
| MT53B4DANW-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53D512M32D2NP-046 AUT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1G64D8NW-046 WT ES:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 1GX64 FBGA 8DP... |
| MT53D2G32D8QD-053 WT ES:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 1GX64 FBGA 8DP... |
| MT53B512M16D1Z11MWC1 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... |
| MT53D768M64D4NZ-046 WT:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA Q... |
| MT53E1G32D4NQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 32G 1GX32 FBGA WT ... |
| MT53D384M64D4NY-046 XT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 2133MHZ FBGAS... |
| MT53B768M32D4TT-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D512M64D4RQ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53D512M64D4NZ-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
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MT53D384M64D4FL-046 XT:E Datasheet/PDF