| Allicdata Part #: | MT53B384M64D4NK-053WTES:BTR-ND |
| Manufacturer Part#: |
MT53B384M64D4NK-053 WT ES:B TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 24G 1866MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 24Gb (384M x 64) ... |
| DataSheet: | MT53B384M64D4NK-053 WT ES:B TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 24Gb (384M x 64) |
| Clock Frequency: | 1866MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory is an important part of modern computing and understanding its application field and working principle is essential for optimising any processing system. The MT53B384M64D4NK-053 WT ES:B TR is a type of dynamic random access memory (DRAM) which is used to store digital information. Its application field and working principle are discussed in this article to illustrate its significant role in the current computing era.
Application field
The MT53B384M64D4NK-053 WT ES:B TR is a 4-gigabit DRAM usually used in computers where high-speed data processing is required. Its low power consumption make it highly suitable for personal computers and mobile devices such as laptops and tablets. Its application field also includes industrial applications such as robotics, industrial automation and military electronics.
Moreover, due its wide range of use, it can be found in a variety of high-performance scientific computing applications such as image processing, computer vision, autonomous vehicles and big data analytics. It can also be used in advanced gaming systems and high-definition videoconferencing.
Working Principle
DRAM stores data using the concept of charge storage. It works by storing a small amount of electrical charge on a tiny capacitor within the memory cells. Each memory cell is composed of a single transistor and one small capacitor. The transistor is used to control the flow of charges while the capacitor is used to store the charge.
Data is stored in digital format and can be written to and read from the memory cells in a fast and efficient manner. The data stored in the DRAM cells must be periodically refreshed to prevent it from being lost. This is done by periodically recharging the capacitors using the transistor.
The data stored in the DRAM is accessed in an ordered sequence known as a row and column cycle. The row cycle accesses the data stored in memory cells found on the same row while the column cycle accesses the data stored in memory cells found on the same column. This sequence of cycles enables the user to access data in a fast and efficient manner.
Conclusion
The MT53B384M64D4NK-053 WT ES:B TR is an essential type of memory used in modern computing. Its low power consumption and high speed make it highly suitable for use in personal computers and mobile devices. Its application field also includes industrial applications, scientific computing applications and advanced gaming systems. Its working principle relies on charge storage and it is accessed in an ordered sequence known as a row and column cycle.
The specific data is subject to PDF, and the above content is for reference
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| MT53B768M64D8NK-053 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
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| MT53B512M32D2DS-062 AIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53B512M64D8HR-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZSDRAM ... |
| MT53D768M64D8WF-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M64D2NV-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B384M32D2NP-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D512M32D2DS-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1024M32D4DT-053 AAT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B384M16D1NK-062 WT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 6G 1600MHZ FBGASD... |
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| MT53B256M64D2NK-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53D384M64D4FL-046 XT:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 24G 384MX64 FBGA X... |
| MT53D256M64D4NY-046 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D8JS-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53D8DBNZ-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5385-UV | Marktech Opt... | 2.87 $ | 142 | EMITTER UV 385NM 5MM RADI... |
| MT53B384M64D4NK-053 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
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| MT53B4DANW-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53D512M32D2NP-046 AUT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1G64D8NW-046 WT ES:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 1GX64 FBGA 8DP... |
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MT53B384M64D4NK-053 WT ES:B TR Datasheet/PDF