| Allicdata Part #: | MT53D256M64D4NY-046XTES:BTR-ND |
| Manufacturer Part#: |
MT53D256M64D4NY-046 XT ES:B TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 16G 2133MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 16Gb (256M x 64) ... |
| DataSheet: | MT53D256M64D4NY-046 XT ES:B TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 16Gb (256M x 64) |
| Clock Frequency: | 2133MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 105°C (TC) |
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MT53D256M64D4NY-046 XT ES:B TR is a type of memory, which is mainly used in applications where large amounts of data need to be stored and retrieved quickly. This type of memory is used in computers, tablets, cell phones, game consoles and many other types of electronic devices. It is an ideal choice for applications that require high speed memory performance.
Memory is a key component of most electronic devices, and it is essential for storing and retrieving data quickly. Memory can be divided into two main categories: volatile and non-volatile. Volatile memory is the type of memory that is constantly changing and becomes inaccessible when the power is turned off. Non-volatile memory is the type of memory that is permanent and retains data even when the power is turned off.
The MT53D256M64D4NY-046 XT ES:B TR is a type of non-volatile memory and is a double data rate synchronous dynamic random-access memory. It is suitable for applications that require high speed memory performance, such as gaming consoles, tablets, and cell phones. This type of memory is often used in combination with other types of memory, such as DRAM and SRAM, to provide greater memory performance. The MT53D256M64D4NY-046 XT ES:B TR is also used in servers and other professional applications for storing large amounts of data quickly and reliably.
The working principle of the MT53D256M64D4NY-046 XT ES:B TR involves transferring data from electronic memory chips to other electronic components. It can store data in binary form, meaning that it is capable of storing large amount of data in binary format. This type of memory has two data rate settings, which are the accelerometer clock rate and the synchronous clock rate. The accelerometer clock rate is the speed at which the memory can process data at an accelerated rate. The synchronous clock rate is the speed at which the memory can process data at a regular rate.
The MT53D256M64D4NY-046 XT ES:B TR also uses a self-refreshing technique, which is a process where the memory automatically refreshes itself periodically to ensure that the data stored in it is correct. To reduce power consumption, the memory also has a standby mode. In standby mode, the memory does not refresh itself and does not execute any commands. This reduces power consumption without sacrificing performance.
The MT53D256M64D4NY-046 XT ES:B TR is a type of memory that is suitable for applications that require high speed memory performance. It is most commonly used in combination with other types of memory to provide high memory performance. It operates with two data rate settings, an accelerated clock rate and a synchronous clock rate and also uses a self-refreshing technique to ensure accuracy. It also has a standby mode that reduce power consumption without sacrificing performance.
The specific data is subject to PDF, and the above content is for reference
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| MT53B512M64D8HR-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZSDRAM ... |
| MT53D768M64D8WF-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M64D2NV-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
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| MT53D512M32D2DS-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1024M32D4DT-053 AAT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
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| MT53B256M64D2NK-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
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| MT53D256M64D4NY-046 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D8JS-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53D8DBNZ-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
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| MT53D512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
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MT53D256M64D4NY-046 XT ES:B TR Datasheet/PDF