| Allicdata Part #: | MT53B384M32D2DS-062AIT:B-ND |
| Manufacturer Part#: |
MT53B384M32D2DS-062 AIT:B |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 12G 1600MHZ |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 12Gb (384M x 32) ... |
| DataSheet: | MT53B384M32D2DS-062 AIT:B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 12Gb (384M x 32) |
| Clock Frequency: | 1600MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -40°C ~ 95°C (TC) |
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MT53B384M32D2DS-062 AIT:B Application Field and Working Principle
MT53B384M32D2DS-062 AIT:B is a memory device developed and manufactured by Micron Technology, Inc. It is a high-performance memory integrated with a wide range of application areas, that allow it to be used in a range of fields including automotive, consumer electronics, healthcare, industrial, and mobile application.
Overview
The MT53B384M32D2DS-062 AIT:B offers a variety of features that makes it an ideal choice for a range of applications. It has an outstanding operating temperature range of -40°C to +125°C, and a power supply range from 1.2V to 3.3V. This device is available in both 64-pin TSOP I and 144-pin BGA packaging options. In addition, it offers up to 4GB of storage capacity, and features ECC error correction for increased data integrity. The device offers improved speed and latency over traditional DRAM, providing faster access times over standard DRAM devices.
Application Field
The MT53B384M32D2DS-062 AIT:B is widely used in automotive, consumer electronics, healthcare, industrial, and mobile application. In automotive applications, its wide temperature range, along with its ECC error correction allows it to handle data reliably and accurately. It also provides increased speed and reduced latency that is perfect for reliable navigation and data storage within vehicles. In consumer electronic applications, its power efficiency, as well as its low standby power, makes it an ideal choice for many varieties of consumer electronics and smart devices. By providing improved speed, data integrity, and low latency, it is a perfect choice for industrial and healthcare application. Finally, its low power consumption and wide temperature range makes it ideal for powering mobile and portable devices.
Working Principle
The MT53B384M32D2DS-062 AIT:B works on a synchronous dynamic random-access memory (SDRAM) principle. This allows data to be stored in a structured or organized way in the memory cell. It operates with the help of a clock controller that allows it to transfer the data from one clock cycle to the next. The MT53B384M32D2DS-062 AIT:B features a Page Mode where data can be accessed in a constant cycle. In this mode, the clock controller allows access to one row and one column in each clock cycle. And by repeating the address sequence, data in each row and column can be accessed within a shorter period of time.
Conclusion
The MT53B384M32D2DS-062 AIT:B is an advanced memory device with a wide range of applications. It is an ideal choice for automotive, consumer electronics, healthcare, industrial, and mobile applications due to its low power consumption, wide temperature range, improved speed and latentcy, and ECC error correction. It works on a synchronous dynamic random-access memory (SDRAM) principle, and is able to transfer data in a structured and organized way with the help of a clock controller.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT53B384M32D2DS-062 AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1600MHZSDRAM ... |
| MT53B512M32D2NP-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1866MHZSDRAM ... |
| MT53B1024M64D8WF-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZSDRAM ... |
| MT53B4DBDT-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53H7BWS5 | 3M | 304.06 $ | 1000 | 3M PELTOR WS COMMUNICATI |
| MT53B128M32D1NP-062 AAT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
| MT53D4DBBP-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53B1DATG-DC | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8GSDRAM - Mobile L... |
| MT53B768M64D8NK-053 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M32D1GZ-062 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ FBGASD... |
| MT53B512M32D2DS-062 AIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53B512M64D8HR-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZSDRAM ... |
| MT53D768M64D8WF-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M64D2NV-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B384M32D2NP-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D512M32D2DS-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1024M32D4DT-053 AAT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B384M16D1NK-062 WT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 6G 1600MHZ FBGASD... |
| MT53D2DADS-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT53B256M64D2NK-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53D384M64D4FL-046 XT:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 24G 384MX64 FBGA X... |
| MT53D256M64D4NY-046 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D8JS-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53D8DBNZ-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5385-UV | Marktech Opt... | 2.87 $ | 142 | EMITTER UV 385NM 5MM RADI... |
| MT53B384M64D4NK-053 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53B1G32D4NQ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 32G 1GX32 FBGA QDP... |
| MT53B4DANW-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53D512M32D2NP-046 AUT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1G64D8NW-046 WT ES:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 1GX64 FBGA 8DP... |
| MT53D2G32D8QD-053 WT ES:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 1GX64 FBGA 8DP... |
| MT53B512M16D1Z11MWC1 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... |
| MT53D768M64D4NZ-046 WT:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA Q... |
| MT53E1G32D4NQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 32G 1GX32 FBGA WT ... |
| MT53D384M64D4NY-046 XT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 2133MHZ FBGAS... |
| MT53B768M32D4TT-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D512M64D4RQ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53D512M64D4NZ-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
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MT53B384M32D2DS-062 AIT:B Datasheet/PDF