MT53B512M64D4NK-053 WT ES:C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential part of modern computing. Without it, devices would not be able to store and manipulate data in a meaningful way. The MT53B512M64D4NK-053 WT ES:C is a Dynamic Random Access Memory (DRAM) chip from Samsung that is used in many products, from personal computers to mobile phones. In this article, we\'ll discuss the application field and working principle of the MT53B512M64D4NK-053 WT ES:C.

Application Field

The MT53B512M64D4NK-053 WT ES:C memory is used in many different types of devices. It can be found in desktop PCs, laptops, tablets, mobile phones, and other consumer electronics. It is also used in industrial control systems and embedded systems. This chip is a high-density DRAM, meaning it offers higher memory density and faster performance than other types of DRAM. Samsung recommends that customers use the MT53B512M64D4NK-053 WT ES:C for applications that require high read/write speeds and low power consumption.

Working Principle

The MT53B512M64D4NK-053 WT ES:C DRAM uses a dual-channel 32-bit DDR4 SDRAM architecture. It is based on a 512Mb array of 8-bit cells. Each cell in the array is made up of two transistors and two capacitors. The transistors act as switches that open and close to control the flow of electricity. The capacitors store the electrical charge. When the switch is open, the capacitor stores a 0; when it is closed, the capacitor stores a 1. This binary 0/1 is then used to store data.

The way the MT53B512M64D4NK-053 WT ES:C works is by using a system of address information, read and write cycles, and command encoding. A memory controller is used to translate the addresses into commands that the device can understand. The read/write cycles are then repeated until the data is stored. Once the data has been successfully stored, it is then processed and used for its intended purpose.

The MT53B512M64D4NK-053 WT ES:C also uses Error Correction Code (ECC) to ensure the reliability of the data stored in the memory. ECC is a form of data protection that uses a check-sum to verify that the data stored in the memory is correct and has not been corrupted. If a single bit of data is corrupted, the ECC can detect it, and the device will discard the data and ignore the error.

The MT53B512M64D4NK-053 WT ES:C memory is a reliable and powerful DRAM that can be used in many applications. It offers a high-density memory architecture and fast read/write speeds. It also has built-in ECC, which helps protect against data corruption and errors. This makes it perfect for applications that require reliable, high-performance memory.

The specific data is subject to PDF, and the above content is for reference