| Allicdata Part #: | MT53B512M64D4PV-053WT:C-ND |
| Manufacturer Part#: |
MT53B512M64D4PV-053 WT:C |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 32G 1866MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 32Gb (512M x 64) ... |
| DataSheet: | MT53B512M64D4PV-053 WT:C Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 32Gb (512M x 64) |
| Clock Frequency: | 1866MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
Description
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< p > Memory is one of the most fundamental parts of a computer system.It provides the means to store and manipulate data and programs that are essential for applications.The MT53B512M64D4PV-053 WT:C is a high-performance, high-density memory device that is used in a wide array of applications.This paper will discuss the application field and working principle of the MT53B512M64D4PV-053 WT:C. p > < p > The MT53B512M64D4PV-053 WT:C is a Dynamic Random Access Memory (DRAM) chip that is composed of 512 megabits (Mbits) of memory cells.It is designed to operate on a 3.3V power supply and can handle data speeds of up to 200MHz.This device is suitable for use in systems that require large amounts of random access memory, such as gaming systems, personal computers, and other embedded real-time computing applications. p > < p > The MT53B512M64D4PV-053 WT:C is a type of synchronous DRAM (SDRAM).Synchronous DRAM is different from asynchronous DRAM in that it is capable of running on a clock-synchronous clock signal.This type of DRAM is capable of operating at much higher speeds than asynchronous DRAM and it is therefore more suitable for applications that require faster memory access. p > < p > The MT53B512M64D4PV-053 WT:C is organized as a hierarchical structure consisting of banks, rows, and columns.When data is written to the device, it is stored in a row and can then be read from that row via a single bank transaction.Each row contains 64-bits of data, which can be divided into 8 8-bit units.The device supports up to eight simultaneous bank transactions, with each bank transaction handling up to 16 8-bit units. p > < p > With regards to the working principle of the MT53B512M64D4PV-053 WT:C, the device operates in a "burst mode".This means that when a bank transaction is started, a predetermined number of contiguous rows are accessed.For each access point, the device will continuously output 64 bits of data until the burst mode is terminated or when the required amount of data from that burst has been obtained.The device also supports sequential and interleaved burst modes, which can improve system performance by allowing accesses to different banks simultaneously. p > < p > The MT53B512M64D4PV-053 WT:C is an ideal solution for a wide range of applications due to its high performance, high density, and low voltage operation.It is suitable for use in gaming consoles, personal computers, embedded systems, and other real-time computing applications.The device is also capable of supporting up to eight simultaneous bank transactions and its burst mode capabilities make it well-suited for applications that require faster memory access. p >The specific data is subject to PDF, and the above content is for reference
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MT53B512M64D4PV-053 WT:C Datasheet/PDF