| Allicdata Part #: | MT53B768M32D4TT-062WT:B-ND |
| Manufacturer Part#: |
MT53B768M32D4TT-062 WT:B |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 24G 1600MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 24Gb (768M x 32) ... |
| DataSheet: | MT53B768M32D4TT-062 WT:B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 24Gb (768M x 32) |
| Clock Frequency: | 1600MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory devices, such as the MT53B768M32D4TT-062 WT:B, are essential components in the digital world. They are widely used in computing operations, telecommunications, programming, and many other fields. This article will discuss the application field and working principle of the MT53B768M32D4TT-062 WT:B memory device.
The MT53B768M32D4TT-062 WT:B is a synchronous dynamic random access memory (SDRAM) device. It is a type of non-volatile memory, meaning it does not need to be continually powered in order to retain its contents. This device has an 8-bit data bus, 1632-bit array layout, and supports a data transfer rate of 200 MHz. It also has an access time of 5.5 nanoseconds and an operating voltage of 3.3V.
This type of memory device is commonly used in a variety of computing applications. It is ideal for use as a main memory, cache memory, or as a storage device in embedded systems. It is also used in routers, modems, digital signal processors, and network interfacing components. The MT53B 768M32D4TT-062 WT:B is an ideal choice for memory-intensive systems requiring high speeds and low latency.
The working principle of the MT53B768M32D4TT-062 WT:B is based on a pulsed latch mechanism. This device is composed of two types of memory cells. The first type is a capacitor, which is regularly charged and discharged by the pulsed latch to store and retrieve data. The second type is the bit line column select logic unit, which is responsible for selecting the proper row and column of the memory cell array. When the device’s address lines are set to the desired address, the device’s bit line selection logic will select the appropriate memory cell. Once the memory cell is selected, the pulse latch will charge or discharge the memory cell’s capacitor depending on the value of the data line.
Overall, the MT53B768M32D4TT-062 WT:B memory device is an excellent choice for a variety of digital applications. Its large memory array and fast data transfer rate make it well suited for memory intensive systems. Its reliance on a pulsed latch mechanism ensures that data is accurately stored and retrieved.
The specific data is subject to PDF, and the above content is for reference
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MT53B768M32D4TT-062 WT:B Datasheet/PDF