| Allicdata Part #: | MT53D1024M32D4NQ-046AIT:D-ND |
| Manufacturer Part#: |
MT53D1024M32D4NQ-046 AIT:D |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 32G 2133MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 32Gb (1G x 32) 21... |
| DataSheet: | MT53D1024M32D4NQ-046 AIT:D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 32Gb (1G x 32) |
| Clock Frequency: | 2133MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -40°C ~ 95°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory: MT53D1024M32D4NQ-046 AIT:D Application Field and Working Principle
The MT53D1024M32D4NQ-046 AIT:D memory is a modern computer memory used in many computing devices. It is a type of dynamic random access memory (DRAM) and is a type of DDR4 SDRAM. The memory is manufactured by Toshiba and used in many data storage, computing and graphics systems. The memory has a 32-bit data width and is designed for data processing and data storage in a wide range of applications.
This memory is designed for use in mobile computing, consumer laptops, gaming systems, and tablets. It is also used in a variety of data storage and communication applications.
In terms of its performance, the memory provides a maximum data transfer rate of 2.4 GHz, is removable and has a latency of 4.8 ns. It has a maximum power consumption of 5.6 watts and operates at a peak frequency of 1333MHz. The device is compliant with the JEDEC standard and is compatible with x86 and ARM architectures.
In terms of its applications, MT53D1024M32D4NQ-046 AIT:D memory is used in a variety of data and computing applications. These include data storage, mobile computing, consumer laptops and tablets, networking, and gaming systems, as well as artificial intelligence and machine learning applications. It is also used in embedded systems and wearables.
The working principle of the MT53D1024M32D4NQ-046 AIT:D memory is based on DDR4 SDRAM technology. This type of memory is made up of an array of memory cells, each of which contains a single bit of information. When a write command is issued, the memory stores the data in one of the cells in the array. To retrieve the data, the computer sends a read command, which instructs the memory to deliver the stored data from the chosen cell.
The memory is able to store data in two different ways - either in the low latency (LL) or high latency (HL) mode. In LL mode, the memory chip can deliver data quickly, in as little as 4.8 nanoseconds; in HL mode, the chip delivers data slowly and takes a maximum of 13.5 nanoseconds. Depending on the type of application that the memory chip is used for, the user can choose to switch the memory chip from LL mode to HL mode, or vice versa.
In addition to its high data transfer rates, the MT53D1024M32D4NQ-046 AIT:D memory also offers a number of other features. It is compliant with the JEDEC DDR4 standard and is compatible with the x86 and ARM architectures, making it an ideal memory solution for embedded systems. The memory chip is also ECC compliant, meaning that it is able to detect and correct errors. Lastly, the memory chip is equipped with a dual-channel feature, which enables the user to transfer data between two different memory chips, increasing the overall performance of the system.
In conclusion, the MT53D1024M32D4NQ-046 AIT:D memory is a powerful and efficient computer memory solution for a variety of advanced applications. It has a data transfer rate of 2.4 GHz and is capable of functioning in both LL and HL modes. The memory chip is compliant with the JEDEC DDR4 standard, is compatible with the x86 and ARM architectures, and is ECC compliant. It is also equipped with a dual-channel feature, which increases its overall performance. The MT53D1024M32D4NQ-046 AIT:D memory is used in data storage, mobile computing, gaming systems, and other advanced applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT53B256M64D2NK-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1866MHZ FBGAS... |
| MT53D512M32D2DS-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53B512M64D4PV-062 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D512M32D2DS-053 AIT:D | Micron Techn... | -- | 1000 | IC DRAM 16G 1866MHZSDRAM ... |
| MT53D256M64D4NY-046 XT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D4D1ASQ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 0 768MX64 FBGA QDP... |
| MT53B512M64D4PV-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B256M64D2TP-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B128M32D1NP-062 WT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
| MT53B512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53D384M32D2DS-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M32D4DT-046 AAT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
| MT53D4DHSB-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5355-UV | Marktech Opt... | 20.86 $ | 40 | EMITTER UV 357NM 5MM RADI... |
| MT53D384M32D2DS-046 AUT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 2133MHZSDRAM ... |
| MT53D512M64D4NZ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53B768M32D4NQ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D256M64D4NY-046 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D512M64D4NW-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53D512M16D1Z11MWC2 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... |
| MT53B512M64D4NK-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
| MT53D384M16D1NY-046 XT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 6G 384MX16 FBGAMem... |
| MT53D8DBNZ-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT53D256M64D4KA-046 XT:ES B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D4SQ-046 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA W... |
| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... |
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT53D1024M32D4NQ-046 AIT:D Datasheet/PDF