| Allicdata Part #: | MT53D1G64D8NZ-046WT:E-ND |
| Manufacturer Part#: |
MT53D1G64D8NZ-046 WT:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 64G 2133MHZ |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 64Gb (1G x 64) 21... |
| DataSheet: | MT53D1G64D8NZ-046 WT:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 64Gb (1G x 64) |
| Clock Frequency: | 2133MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory is an important part of computing technology, serving as a medium to store data, programs and software. In order to improve the performance of the computer, different types of memory are used. Such is the case of the MT53D1G64D8NZ-046 WT:E memory, one of the most modern memories that offers various benefits in different application fields.
The first use of the MT53D1G64D8NZ-046 WT:E memory is in systems of graphic design and audio-visual production, as it offers improved initial loading speed and time. This memory is also useful in gaming, as the MT53D1G64D8NZ-046 WT:E memory module has better latency and a stable performance in terms of games. In terms of storage, this type of memory can save an extraordinary amount of files and data, making it an ideal medium for storing and transferring data within computers.
In addition to this, the MT53D1G64D8NZ-046 WT:E memory is also used in data center systems and cloud services, as well as in the financial sector, where its high speed, large capacity and stability are crucial for fast and accurate data manipulation. Finally, it can also be used for scientific computing, for example for applications such as machine learning, artificial intelligence and deep learning.
Now, let us look at the working principle of this type of memory. Firstly, the memory module contains a grid-like network of cells, which are made of electrical components that are capable of storing data. Each cell contains electrons that are held in place by electrostatic force. When current is applied, it causes a change in the electrostatic field of the electrons, which can be used to change the state of the cells, thus allowing either a ‘1’ or a ‘0’ to be stored.
The changes in the cells’ states are done through a process known as programming. This is done by sending electrical signals through a process known as read-write-modify (R-W-M). In the R-W-M sequence, the cells are read and analysed, which is followed by the application of the electrical signals which cause changes in the electrostatic field of the cells, making them capable of storing either a ‘1’ or a ‘0’.
Finally, once the data has been stored in the cells, it is sent back to the electrical components in the memory module, where it is stored permanently. This is known as memory retention, and it works by applying a constant voltage to the electrical components, thus allowing them to hold the stored data.
In conclusion, the MT53D1G64D8NZ-046 WT:E memory is one of the most advanced memories available today. It is used in a variety of application fields, such as graphic design, audio-visual production, gaming, data centers, cloud services, the financial sector and scientific computing. Furthermore, its working principle involves the use of cells, which are able to store data through a process known as R-W-M, while its memory retention is achieved through the application of a constant voltage to the electrical components.
The specific data is subject to PDF, and the above content is for reference
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MT53D1G64D8NZ-046 WT:E Datasheet/PDF