MT53D256M16D1NY-046 XT ES:B

Memory is one of the most important components of any computer. The memory you choose for your system or device has a direct effect on its performance and stability. The MT53D256M16D1NY-046XTES:B is a DRAM memory module designed to meet a wide range of applications. This article will discuss the application field and working principle of this memory module in more detail.

Application Field

The MT53D256M16D1NY-046XTES:B is a 8GB DDR3L PC3-14900 memory module specifically designed for embedded systems. It is the latest and most advanced type of DRAM memory module available on the market and is compatible with a number of memory controllers and system architectures. It is ideal for applications that require a high degree of integration, such as storage servers and edge servers.

Working Principle

The MT53D256M16D1NY-046XTES:B uses a traditional DRAM memory architecture. DRAM memory works by storing data in tiny capacitors embedded in the memory chips. When a bit of data is being read or written, the state of the capacitors is changed to reflect the new information. This is done by sending either a voltage “Hi” or “Lo” to the capacitors. When no voltage is applied the capacitors maintain their original state. The memory chip then takes this information and stores it. This is the basic working principle of DRAM memory.

Performance

The MT53D256M16D1NY-046XTES:B offers excellent performance. It has a theoretical peak transfer rate of up to 2400MB/s and a sustained transfer rate of up to 1600MB/s. This makes it ideal for applications that require large amounts of data to be transferred quickly and reliably. The memory module also offers superior memory reliability due to its error correction code (ECC) and advanced power management features. This ensures that your data is safe and the memory module runs at the highest possible performance level.

Conclusion

The MT53D256M16D1NY-046XTES:B is one of the most advanced DRAM memory modules available on the market. It has a wide range of application fields and provides a high level of performance and reliability. This makes it an ideal choice for embedded systems, storage servers, and edge servers. Furthermore, its working principle is based on the traditional DRAM memory architecture and provides fast and reliable data transfer.