| Allicdata Part #: | MT53D256M64D4NY-046XTES:B-ND |
| Manufacturer Part#: |
MT53D256M64D4NY-046 XT ES:B |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 16G 2133MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 16Gb (256M x 64) ... |
| DataSheet: | MT53D256M64D4NY-046 XT ES:B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 16Gb (256M x 64) |
| Clock Frequency: | 2133MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 105°C (TC) |
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Memory
MT53D256M64D4NY-046 XT ES:B
The MT53D256M64D4NY-046 XT ES:B is a memory device used in many different applications. The device is a DDR3 memory component used for many different applications ranging from industrial, communication, automotive, and medical purposes. This device helps to manage data in a wide variety of applications. It is especially useful in applications that require a high-bandwidth data rate, such as video and audio streaming, imaging, networking, and data storage.
The MT53D256M64D4NY-046 XT ES:B has a memory capacity of 256Mbit with a single-channel DDR3 interface. It has a data rate of 1066MHz and a power supply voltage of 1.5V. The device also features a burst length of 8 and a latency of 8 clocks. The device has a maximum memory bandwidth of 17.1GB/s and an I/O voltage of 0.90V to 1.60V.
The main purpose of the device is to manage and control data. It helps to transfer data between the application and the memory module quickly and efficiently. It is a reliable device that can maintain a consistent and stable performance even under heavy use. Its low power consumption, high reliability and robustness make it ideal for applications where energy efficiency and reliability are critical.
It is an ideal choice for many applications due to its ability to perform in extreme temperatures and other environmental conditions. It also has an error-correcting code (ECC) which helps to identify and correct errors in the data transfer process. This ensures that the data transferred is accurate and error-free. Additionally, the device has a self-refresh feature which enables it to maintain the data stored in its memory without the need for external power.
The MT53D256M64D4NY-046 XT ES:B can be used in a variety of applications such as industrial automation, medical imaging, cloud storage, video streaming, gaming, and more. Its fast data transfer rate and reliable performance make it an ideal choice for applications that need to stay up-to-date with the most recent and advanced information. This device is also ideal for applications that require energy efficiency, such as automotive and medical applications.
The MT53D256M64D4NY-046 XT ES:B is an ideal choice for many applications that require a reliable and high-performance memory component. Its low power consumption, high speed, and data rate make it a popular choice for many different applications. Additionally, its error-correction features and self-refresh capabilities ensure that the data stored in its memory is accurate and up-to-date.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| MT53B1DATG-DC | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8GSDRAM - Mobile L... |
| MT53B768M64D8NK-053 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M32D1GZ-062 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 1600MHZ FBGASD... |
| MT53B512M32D2DS-062 AIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53B512M64D8HR-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZSDRAM ... |
| MT53D768M64D8WF-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53B256M64D2NV-062 XT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B384M32D2NP-053 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D512M32D2DS-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1024M32D4DT-053 AAT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B384M16D1NK-062 WT ES:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 6G 1600MHZ FBGASD... |
| MT53D2DADS-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT53B256M64D2NK-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53D384M64D4FL-046 XT:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 24G 384MX64 FBGA X... |
| MT53D256M64D4NY-046 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D8JS-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 1866MHZ FBGAS... |
| MT53D8DBNZ-DC TR | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5385-UV | Marktech Opt... | 2.87 $ | 142 | EMITTER UV 385NM 5MM RADI... |
| MT53B384M64D4NK-053 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
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| MT53B4DANW-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4SDRA... |
| MT53D512M32D2NP-046 AUT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D1G64D8NW-046 WT ES:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 1GX64 FBGA 8DP... |
| MT53D2G32D8QD-053 WT ES:E | Micron Techn... | 0.0 $ | 1000 | LPDDR4 64G 1GX64 FBGA 8DP... |
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| MT53E1G32D4NQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 32G 1GX32 FBGA WT ... |
| MT53D384M64D4NY-046 XT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 2133MHZ FBGAS... |
| MT53B768M32D4TT-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D512M64D4RQ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53D512M64D4NZ-053 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
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MT53D256M64D4NY-046 XT ES:B Datasheet/PDF