| Allicdata Part #: | MT53D4DBNY-DC-ND |
| Manufacturer Part#: |
MT53D4DBNY-DC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC SDRAM LPDDR4 4G ?? NA QDP |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC |
| DataSheet: | MT53D4DBNY-DC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
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Application Field and Working Principle of MT53D4DBNY-DC
MT53D4DBNY-DC, also known as a Dual Data Rate 4 Dual Bit Dual In-line Memory (DDR4DBIM), is an integrated circuit memory chip manufactured by Samsung. It is a specialized version of the military grade analog-to-digital converters and is used in a variety of applications such as in flight electronic systems and radar. Its features include:
- High speed data transmission over wideband channels
- Low power consumption for improved device efficiency
- Robust data redundancy for secure data storage
- Small footprint for easy integration in small form factor devices
- Excellent temperature range operating more reliably in extreme conditions
The MT53D4DBNY-DC memory chip works by storing data in the cells of the memory array in the form of electrical impulses. Each individual bit is identified by three voltage levels: a low voltage, a high voltage and a ground. The data is stored in two state, which refers to the storage of a single ‘1/0’ binary bit. Each bit consists of a high voltage, a low voltage and a ‘no change’ state. By changing the electrical pulses of the bit, the data can be written or retrieved from the chip.
The data is transmitted at a rate of 800Mb/sec, which is four times faster than conventional DDR2 and DDR3 memory chips. Furthermore, the chips provide a much improved data throughput, and latency time. As the data is transmitted at a higher speed, the data bandwidth is also improved. This can improve system performance by using less power. The high speed and low latency time combined with the embedded data redundancy make the MT53D4DBNY-DC chips a reliable and high performance memory solution for a wide range of industrial applications.
The MT53D4DBNY-DC chip is used in a range of industrial applications such as signal processing, embedded systems, digital signal processing, and military communications. In signal processing, the chip is used to capture, store, and process signals. The chip is also used in embedded systems to store and process data quickly and accurately. In digital signal processing, the chip is used to perform digital signal processing operations such as convolution, Fourier transform, filtering, and digital filtering.
In military communications, the chip is used in a variety of applications such as in a secure server to protect military communication from unauthorized access. The chip is used in radar system analysis, navigation, and communications. It is also used in medical imaging, video surveillance and machine vision applications.
In addition to the above applications, the MT53D4DBNY-DC is also used in aerospace and automotive applications. The chip is able to withstand extreme temperatures and is ideal for use in high-performance systems used in aircraft, spacecraft and other space vehicles. The MT53D4DBNY-DC chip is used in autonomous vehicles to increase accuracy and reduce latency in response to data input.
The MT53D4DBNY-DC chip is an innovative and reliable memory chip that is used in a variety of industrial, aerospace and automotive applications. The chip offers a combination of high speed, low latency, and robust data redundancy which makes it suitable for a wide range of applications. The chip is also easy to integrate into small form factor devices and can withstand extreme temperatures while providing reliable data storage and data processing capabilities.
The specific data is subject to PDF, and the above content is for reference
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| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
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| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
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| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
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| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... |
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| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
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MT53D4DBNY-DC Datasheet/PDF