| Allicdata Part #: | MT53D512M64D4NW-062WTES:D-ND |
| Manufacturer Part#: |
MT53D512M64D4NW-062 WT ES:D |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 32G 1600MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 32Gb (512M x 64) ... |
| DataSheet: |  MT53D512M64D4NW-062 WT ES:D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 32Gb (512M x 64) |
| Clock Frequency: | 1600MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
Description
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- Introduction: MT53D512M64D4NW-062 WT ES:D is a type of dynamic random access memory (DRAM) designed and manufactured by Micron Technology. It is a versatile memory and can be used in a variety of applications.
- Memory: MT53D512M64D4NW-062 WT ES:D is a 512 megabyte (MB) single-in-line memory module (SIMM). This memory module is a DDR4 synchronous DRAM with a data rate of up to 2666 MT/s, which consists of 8 banks, 16 ranks, and 64 memory chips on the printed circuit board (PCB). It is available in commercial and industrial versions and can operate from 0°C to 85°C.
- Application Field: MT53D512M64D4NW-062 WT ES:D is a DRAM module suitable for high-speed computing, game consoles, scientific and engineering workstations, workgroup servers, and embedded designs. Its best applications are high-end desktop computers, mobile devices, digital signage, and gaming consoles. It can also be used in networking, networking storage devices, routers, digital media players, and storage appliances. >
- Working Principle: MT53D512M64D4NW-062 WT ES:D is a synchronous DRAM which operates on a double-data-rate architecture consisting of two data transfer rate (DTRs). The two DTRs are the reads and writes. The device transfers data on both the rising and falling edges of the clock signal. It has an on-die termination (ODT) which is used to terminate the signal and reduce reflections in the data bus. The device also has auto-refresh and self-refreshing features to improve system stability. When the memory is in active mode, the device will automatically enter both self-refresh and auto-refresh modes. During self-refresh, the device will periodically refresh the DRAM cells to maintain data integrity. During auto-refresh, the device will automatically refresh the entire array without impacting system performance.
- Conclusion:MT53D512M64D4NW-062 WT ES:D is a versatile memory module suitable for high-end applications such as workstations, servers, and game consoles. It is a DDR4 synchronous DRAM and has an on-die termination to reduce signal reflections. It also has a double-data-rate architecture with both self-refreshing and auto-refreshing features. The device is available in commercial and industrial versions and can operate from 0°C to 85°C. It is an ideal choice for a variety of high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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