MT53D512M64D4NZ-046 WT ES:E Allicdata Electronics
Allicdata Part #:

MT53D512M64D4NZ-046WTES:E-ND

Manufacturer Part#:

MT53D512M64D4NZ-046 WT ES:E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 32G 2133MHZ FBGA
More Detail: SDRAM - Mobile LPDDR4 Memory IC 32Gb (512M x 64) ...
DataSheet: MT53D512M64D4NZ-046 WT ES:E datasheetMT53D512M64D4NZ-046 WT ES:E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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Memory

The MT53D512M64D4NZ-046 WT ES:E LED module is a common type of memory device used in a range of applications. It is often used for data storage and for running certain applications. In this article, we will look at the application field and working principle of the MT53D512M64D4NZ-046 WT ES:E.

The MT53D512M64D4NZ-046 WT ES:E is a type of static random access memory (SRAM) component. It has a high storage capacity of 512 megabits and is organised in a 64-bit wide data bus. This makes it an ideal choice for applications that require high-speed processing and fast access to data.

The MT53D512M64D4NZ-046 WT ES:E is a versatile component and can be used in a variety of applications. It is commonly used in automotive, medical, industrial and consumer electronic applications. It is also used in other electronic products such as storage devices, RAM modules, interface boards and embedded systems.

The working principle behind the MT53D512M64D4NZ-046 WT ES:E is based on the concept of static memory cells. However, unlike DRAM memory, which requires a continuous stream of electricity to maintain its stored data, SRAM needs no electrical current to retain its stored data.

In the MT53D512M64D4NZ-046 WT ES:E module, there are two sets of memory cells, one containing the stored data and the other containing the address bits. The address bits are used to reference the stored data in the memory cells. The data is stored in the form of a binary code as ‘0’ or ‘1’. Once a memory cell is accessed by the address bits, it retrieves the stored binary data and sends it to the output register.

The speed at which the MT53D512M64D4NZ-046 WT ES:E module can be used is one of the reasons why it is commonly used. As access to data is fast, the module can be used for applications that require intense computation or intensive data processing in a short amount of time.

Strong error correction coding (ECC) is used in the MT53D512M64D4NZ-046 WT ES:E module to ensure that data is not corrupted while in transit or in storage. ECC codes can be used to detect and correct data that has been corrupted due to environmental factors such as interference, temperature or even physical damage. This ensures that data is always valid and secure.

The MT53D512M64D4NZ-046 WT ES:E module is a versatile component and is widely used in a range of applications. Its high storage capacity, low power consumption, fast access to data and efficient error correction coding make it an ideal choice for those who require reliable and efficient data storage and processing.

The specific data is subject to PDF, and the above content is for reference

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