MTD6N15T4

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MTD6N15T4 Application Field and Working Principle

The MTD6N15T4 is a field-effect transistor (FETs) used for high-speed switching operations in a wide range of applications. It has excellent temperature stability, low on-state resistance, fast switching time, and good reverse transfer capacitance characteristics. The MTD6N15T4 features an integrated anti-parallel diode to protect the device during avalanche breakdown.

Application Field

The MTD6N15T4 is a n-channel enhancement mode device that is used for switching applications such as DC motors, scanners, cameras and printers. Due to its high breakdown voltage, it is also suitable for high voltage applications such as switching power supplies and UPS systems. This device is easy to use and provides a wide range of functionalities that make it suitable for multiple applications.

Features

• Max drain-source voltage (VDS): 60V
• Max drain current (ID): 3A
• Operating temperature range: -55°C to +150°C
• Maximum drain-source on-state resistance: 0.11ohm
• High-speed switching operations
• Integrated anti-parallel diode
• Suitable for multiple applications

Working Principle

The MTD6N15T4 is a n-channel enhancement mode FET, which features four pins – Gate (G), Drain (D), Source (S) and Substrate (SUB). The drain and source pins of the device are used as the output pins whereas the gate is the input pin. When the gate-source voltage (VGS) is below the threshold voltage (Vth), the device is off and the output pin (drain and source) is floating. When the gate-source voltage is greater than the threshold voltage, the device is turned on and a current will flow through the drain and source pins. The greater the gate-source voltage, the higher the current. The substrate pin of the device is used to provide a path for the electric charge to flow through the device.

The MTD6N15T4 features an anti-parallel diode, which is normally used to shunt or steer the electric charge away from the device. This prevents the device from becoming damaged during an avalanche breakdown. The substrate pin is also used to provide the electrical connection between the source and the gate, thus allowing the device to operate.

Conclusion

In summary, the MTD6N15T4 is a field-effect transistor that is suitable for high speed switching applications. It has a range of useful features such as a low on-state resistance, excellent temperature stability, and an integrated anti-parallel diode for protection during avalanche breakdowns. The device is easy to use and provides a wide range of functionalities that make it suitable for multiple applications.

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