
Allicdata Part #: | MTD6N15T4GOSTR-ND |
Manufacturer Part#: |
MTD6N15T4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 6A DPAK |
More Detail: | N-Channel 150V 6A (Tc) 1.25W (Ta), 20W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta), 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The MTD6N15T4G is a type of field effect transistor (FET), classified as a single metal oxide semiconductor field effect transistor (MOSFET). The device works by modulating a controlled electric field above a channel of conducting semiconductor material. By modulating the electric field, the amount of current that passes through the component can be changed, allowing for precise control of the current. By controlling the amount of current either passing through or being blocked, theMTD6N15T4G can be used to regulate a variety of different electrical power circuits.
The purpose of using a FET is to provide a high-impedance interface between a power source and load. This allows the user to achieve very precise control over the direction, amount and timing of the flow of power from the source to the load. This is why FETs are often used in the construction of power converters, power switches and motor control systems. The use of FETs is also highly advantageous due to their low power consumption and exceptionally low noise levels, as well as a highly efficient transfer of power.
DC motors are a common application where MOSFETs are used. A variable-frequency drive (VFD) is commonly used in these scenarios and requires the precise control that FETs provide. The MTD6N15T4G is an ideal component for this kind of application due to its high current handling capacity, fast switching speed, and low on-resistance. This ensures that the device can accurately and efficiently control the current in the motor, allowing a smooth, efficient and accurate performance even at high speeds.
The MTD6N15T4G is also highly reliable and suitable for use with sensitive equipment and applications. The device is constructed from high quality materials and is designed to withstand extreme temperatures and humidity levels. This means that when used in high power applications, the device can be relied upon to control the current and protect the machinery from damage. As an added convenience, the device also features built-in protection features to further protect against short circuit, overvoltage and overcurrent conditions.
The MTD6N15T4G is a powerful, efficient and reliable device that can be used in a variety of different electrical power applications. It can be used in DC motor control, AC power converters and power switches, providing a high-impedance interface between a power source and a load. The device is highly reliable and has built-in protection features to protect against dangerous electrical conditions. The MTD6N15T4G is an ideal choice for a variety of power applications due to its superior performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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