MTM763200LBF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	1.9A, 1.2A
Rds On (Max) @ Id, Vgs:	105 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id:	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	280pF @ 10V
Power - Max:	700mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	WSMini6-F1-B
Base Part Number:	MTM76320

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Introduction

The MTM763200LBF is a FET array specifically designed to be used in application fields where high performance and low power consumption is desired. This array makes it possible to quickly and easily build circuits which require high current capability. Additionally, the power efficiency of the MTM763200LBF makes it suitable for industrial, automotive, and consumer applications.

Application Field

The MTM763200LBF is designed for use in applications requiring high performance and low power consumption, such as switch-mode power supplies, digital displays, and high-current motor drives. In addition, the low on-state resistance of this array makes it suitable for high frequency switching and linear applications. The array can be used in applications with input voltages ranging from 0 V to 40 V.

Working Principle

The MTM763200LBF is a FET array composed of a series of transistors with a gate structure that enables low RDSon (on-state resistance) operation. The array uses a field-effect structure, in which the gate voltage is used to control the current flowing through the device. When the voltage on the transistor\'s gate rises, the current drawn through the source and drain of the transistor increases and allows more current to flow through the transistor. The opposite is also true; when the gate voltage falls, the current through the drain and source lessens, and less current can flow through the transistor.The array also has an integrated protection circuit which protects the array from potential damages due to hot-swapping or over-voltage conditions. Additionally, the array also provides protection against over-current and thermal conditions.

Conclusion

The MTM763200LBF is a FET array specifically designed for applications requiring high performance and low power consumption. It utilizes a field-effect structure, in which the gate voltage is used to control the current flowing through the device. Additionally, the array has an integrated protection circuit which provides protections against hot-swapping, over-voltage, over-current, and thermal conditions. The MTM763200LBF is ideal for switch-mode power supplies, digital displays, and high-current motor drives.

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