MTM78E2B0LBF

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Modern technology has developed well beyond traditional transistors to integrated circuits and microelectronics. The metal-oxide semiconductor field-effect transistor or MOSFET is a type of FET, or field effect transistor, designed to reduce power consumption. One example of a MOSFET is the DE MTM78E2B0LBF. This particular device has been designed for use in applications such as LED lighting, LED backlighting, automotive power supplies and IGBT/PFC motor drives. The following provides an overview of the MTM78E2B0LBF application field and working principle.

MTM78E2B0LBF Application Field

The MTM78E2B0LBF is a dual-paralleled device which utilizes high voltage MOSFETs in a 4-cell array. Produced by Diodes Incorporated, this device has been specifically designed for use in applications such as LED lighting, LED backlighting, automotive power supplies and IGBT/PFC motor drives. The package size is a small, ultra-thin TO-252H-2 configuration utilizing a raised tab for enhanced thermal performance. The body size is seven millimeters by ten millimeters, making it one of the smallest MOSFETs on the market.

The device is capable of operating in a wide range of temperatures and extreme operating conditions, and is characterized by its fast switching capability, low gate charge and low RDSon providing efficiency and reliable operation over an extended temperature range. The MTM78E2B0LBF has a wide gate source voltage withstand of up to 26 V, meaning it is suitable for a wide variety of commercial and industrial applications, as well as for automotive applications.

MTM78E2B0LBF Working Principle

The MTM78E2B0LBF operates in the same manner as all other MOSFETs, with a gate terminal, source terminal and drain terminal. The device works in a similar way to a traditional field effect transistor, and is composed of a substrate with N-type and P-type semiconductors. This arrangement creates a depletion zone, much like a FET, where current can only flow in one direction.

The gate terminal triggers an electric field at the depletion layer of the source and drain, which alters the conductivity of the channel between the source and drain, allowing current to flow in one direction. The amount of current that is allowed to flow is determined by the amount of voltage applied to the gate terminal. When no voltage is applied the channel is open, allowing the current to flow freely. As the voltage is increased, the channel is closed, reducing the amount of current that can flow.

The MTM78E2B0LBF works at a much higher frequency than a traditional FET and is also much more reliable over time. Additionally, because the device is a dual-paralleled MOSFET array, it is capable of carrying much higher current and power than a single device. This makes it perfect for applications such as automotive power supplies and motor drives, where reliability and high current are key.

Conclusion

The MTM78E2B0LBF is an advanced, high voltage MOSFET with low gate charge and low RDSon for efficient and reliable operation. The device is designed for use in applications such as LED lighting, LED backlighting, automotive power supplies and IGBT/PFC motor drives. The small, ultra-thin TO-252H-2 package and wide gate source voltage withstand make it ideal for a wide range of commercial and industrial applications, as well as for automotive applications.

The MTM78E2B0LBF operates in the same manner as all other MOSFETs, with a gate terminal, source terminal and drain terminal. When no voltage is applied the channel is open, allowing the current to flow freely, and increasing the voltage closes the channel, reducing the amount of current that can flow. The device works at a much higher frequency than a traditional FET and is also much more reliable over time.

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