MTM763250LBF Allicdata Electronics
Allicdata Part #:

MTM763250LBF-ND

Manufacturer Part#:

MTM763250LBF

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N/P-CH 20V 1.7A/1A 6-SMD
More Detail: Mosfet Array N and P-Channel 20V 1.7A, 1A 700mW Su...
DataSheet: MTM763250LBF datasheetMTM763250LBF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11915
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 1A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Power - Max: 700mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: WSMini6-F1-B
Description

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MTM763250LBF is an array of Logic N-channel enhancement Mode MOS Field Effect Transistors (MOSFETs) that integrate two N-Channel MOSFETs sharing common elements along with a circuit protection. It has a high-speed switching performance and can be used to improve system performance.

The MTM763250LBF is typically placed in various power switching applications ranging from low- to high-voltage settings with high-current requirements. Its key features are a wide package of power range applications and improved high-speed switching performance.

Application Field and Working Principle

MTM763250LBF can be used in applications such as high-side Gate driver applications, level shifting circuits, ORing MOSFETs and many other power-switching applications. It can also be used to replace two single MOSFETs in the same circuit.

The MTM763250LBF works on the principle of changing the gate voltage for controlling current flow through the drain and source terminals of the transistor. The Drain and Source terminals can be connected either to generate P-type or N-type MOSFETs depending on the polarities of the power supplies. The threshold voltage can also be adjusted to produce the desired output by changing the gate voltage.

Advantages

The main advantage of an MTM763250LBF is its wide package of power range applications and its improved high-speed switching performance. This makes it suitable for applications such as motor control, power switching and high-side Gate driver applications. It is also very compact, making it possible to minimize the system size and to reduce the cost. Moreover, the circuit protection is integrated in the device, which minimizes additional components and increases the system reliability.

Conclusion

The MTM763250LBF is an array of Logic N-channel enhancement Mode MOS Field Effect Transistors which offers customers high-speed switching performance, a wide package of power range applications and improved circuit protection. This makes it suitable for applications such as high-side Gate driver applications, level shifting circuits, ORing MOSFETs and many other power-switching applications. The MTM763250LBF is an ideal solution for many system requirements and applications.

The specific data is subject to PDF, and the above content is for reference

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