Allicdata Part #: | MTM761110LBFTR-ND |
Manufacturer Part#: |
MTM761110LBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET P-CH 12V 4A WSMINI6 |
More Detail: | P-Channel 12V 4A (Ta) 700mW (Ta) Surface Mount WSM... |
DataSheet: | MTM761110LBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | WSMini6-F1-B |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 10V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MTM761110LBF may not be a familiar term to many, but it is an important component in a large segment of electronic systems. It is a metal-oxide-semiconductor field effect transistor, or MOSFET, and it is commonly used in many products including mobile phones, laptop computers, Bluetooth headsets, and even video game consoles. The MTM761110LBF is a highly efficient and reliable transistor, and it can be used to perform many useful functions in a wide variety of applications.
The MTM761110LBF is a single-pole double-throw (SPDT) MOSFET. It is a N-channel MOSFET which means it is a voltage-controlled device that uses an electric field to activate or deactivate a circuit. Its gate voltage (VGS) must remain above the threshold voltage level (VGS(th)) to allow current to flow from drain to source. The drain current (ID) is therefore controllable by adjusting the VGS voltage.
The MTM761110LBF is primarily used in switching and amplifier applications. In switching circuits, its low threshold voltage and low gate-drain capacitance allow it to operate at high frequencies. In amplifying circuits, the on-resistance of the MTM761110LBF (typically 5 milliohms) is low, making it ideal for boosting voltage amplification. The ability to handle a large amount of current (up to 10 amps) and its low RDS(on) make it suitable for driving high-power loads.
The working principle behind the MTM761110LBF involves controlling current flow through the transistor. The MTM761110LBF is a metal-oxide-semiconductor field effect transistor, or MOSFET, which is a voltage-controlled device. This means that when the gate voltage (VGS) is applied, a majority carrier is taken from the gate insulator, forming an inversion layer in the channel region near the gate. This inversion layer is then saturated with electrons, lowering the effective resistance between the source and the drain. When the gate voltage is increased or decreased, the effective resistance also changes, allowing either more or less current to flow from the source to the drain.
The MTM761110LBF is an important component in many electronic systems and its application is varied. It is typically used in switching and amplifier circuits where its ability to handle high frequencies and currents is highly valued. Furthermore, its low RDS(on) and high current handling capability makes it ideal for driving high-power loads. Given its wide range of uses and reliable operation, it is no surprise that the MTM761110LBF is a popular choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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