MTM761230LBF Allicdata Electronics
Allicdata Part #:

MTM761230LBFTR-ND

Manufacturer Part#:

MTM761230LBF

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET P-CH 20V 3A WSMINI6
More Detail: P-Channel 20V 3A (Ta) 700mW (Ta) Surface Mount WSM...
DataSheet: MTM761230LBF datasheetMTM761230LBF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.13970
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: WSMini6-F1-B
Package / Case: 6-SMD, Flat Leads
Description

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The MTM761230LBF is a single N-Channel Power MOSFET designed specifically for the low voltage, high current requirements of board-level applications. This MOSFET is particularly suited due to its small size, low on-resistance, and low operating voltage, making it an ideal component for power supply, motor drive, and consumer application in the consumer electronics, white goods, medical and telecommunication markets.

Field-effect transistors (FETs) are active semiconductor devices widely used in electronics. FETs consist of a source, gate and drain which can be either P-type or N-type. The MTM761230LBF is an N-Channel MOSFET which means the drain-source path is based on an N-type material. The inclusion of a gate opens up a wide range of electrical characteristics and the MTM761230LBF can be controlled by voltage or current applied to the gate.

Application Field of MTM761230LBF

The MTM761230LBF is suitable for a wide range of applications due to its specifically designed low voltage and high current nature. This includes automotive, power supply, motor drive, and consumer electronics.​ The low voltage, high current nature of the device makes it ideal for applications in the consumer electronics, white goods, medical, and telecommunication markets.

The small size of the MTM761230LBF makes it ideal for a wide range of design challenges which have previously been considered impossible. By utilizing a flat package which takes up minimal board space, MTM761230LBF meaning that a wider range of applications can now fit onto increasingly small boards.

The low switching times and low on-resistance make the MTM761230LBF ideal for high power, high frequency applications. This makes the device suitable for designs which require stable and reliable operation in conditions with fluctuating temperatures, high voltage peaks and intense current.

Working Principle of MTM761230LBF

The MTM761230LBF contains a source, a gate and a drain. The gate is insulated from the channel and it is used to switch the channel between On and Off states. When a small voltage is applied between the gate and the source, it creates an electric field in the gate region which modifies the shape of the channel. This modifies the resistance of the channel, allowing current to flow from the drain to the source.

When no gate voltage is applied, the channel is completely cut off and no current can flow. In this mode, the MTM761230LBF operates in a linear region and it can be used for controlling current flowing in other components. The gate voltage is adjusted based on the desired output and it can be used to switch the MTM761230LBF on or off.

Conclusion

The MTM761230LBF is a single N-Channel Power MOSFET specifically designed for low voltage and high current applications. The small size, low on-resistance and low operating voltage make the device suitable for a wide range of applications including power supply, motor drive, and consumer applications in the consumer electronics, white goods, medical and telecommunication markets. The device can be controlled by voltage or current applied to the gate, allowing for the device to be easily switched between On and Off states.

The specific data is subject to PDF, and the above content is for reference

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