Allicdata Part #: | MTM981400BBFTR-ND |
Manufacturer Part#: |
MTM981400BBF |
Price: | $ 1.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET P-CH 40V 7A S08 |
More Detail: | P-Channel 40V 7A (Ta) 2W (Ta) Surface Mount SO8-F1... |
DataSheet: | MTM981400BBF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.97544 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | SO8-F1-B |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MTM981400BBF is a single N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a highly versatile component with a wide range of applications. A basic understanding of its working principle is essential for its successful application.
The MTM981400BBF operates as a voltage driven switch. It is designed to be an enhancement-type MOSFET and uses a number of features to control the voltage across the device. It is a three-terminal device, with a Drain, a Source, and a Gate. The Gate is the control terminal for the MOSFET and is used to sense the applied voltage. When the Gate is uncharged, there is no current flow from the Drain to the Source. However, when a voltage is applied to the Gate, the MOSFET starts to conduct current from the Drain to the Source. The voltage required to turn the MOSFET on is called the “Threshold voltage” or the “Gate voltage”.
The MTM981400BBF also uses a number of other features to maximize its performance. One feature is the “Body Effect”. This is used to reduce the gate capacitance and increase the speed of the node. It also helps to reduce the power consumption of the device by reducing the total charge transfer required to switch the MOSFET. The Body Effect is increased by the use of a dedicated substrate connected to the Drain, which reduces the Gate to Source capacitance.
The third feature is the “Drain to Source resistance”. This is used to reduce the power consumed by the MOSFET when on and also reduce the various losses that can occur when switching the MOSFET on or off. This resistance also helps to protect the MOSFET from being damaged due to overvoltage. The Drain to Source resistance is usually in the range of 0.5 to 1 ohm.
The MTM981400BBF is mainly used in power switching applications. It can be used to control DC motors, AC motors and also provides a highly efficient means of controlling the operation of lighting systems. It is also commonly used in power management applications, such as battery charging and monitoring, as it provides a reliable and cost effective way of controlling power flow. In addition, the MTM981400BBF can be used in a variety of other applications, such as protection circuits, logic circuits and signal switches.
In conclusion, the MTM981400BBF is a versatile component with a wide range of applications. Its ability to efficiently control the flow of current and its simple working principle makes it an ideal choice for a variety of applications. This component is an essential component for any power management circuit and is highly reliable and cost effective.
The specific data is subject to PDF, and the above content is for reference
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