MTM982400BBF Allicdata Electronics
Allicdata Part #:

MTM982400BBFTR-ND

Manufacturer Part#:

MTM982400BBF

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 40V 7A SO8-F1
More Detail: N-Channel 40V 7A (Ta) 2W (Ta) Surface Mount SO8-F1...
DataSheet: MTM982400BBF datasheetMTM982400BBF Datasheet/PDF
Quantity: 1000
3000 +: $ 1.15438
Stock 1000Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SO8-F1-B
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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MTM982400BBF is a integrated circuit (IC) designed by Matrix Semiconductor, Inc. It is a high-side switch rated for a maximum power of 600 mW. It is a field effect transistor (FET) available in a chip scale package or a single in-line package (SIP) package for easy integration into any device.

The MTM982400BBF is intended for use in a variety of applications, such as high-side load switching, battery protection switching, and other various power switching applications. Its wide load current range allows it to be used in a range of applications.

The working principle of the MTM982400BBF is based on the principle of a FET where the current flow between the source and gate is controlled by the voltage applied between the gate and the source. It consists of a FET core with a connected gate driver which is the key to its successful operation. The gate driver is used to supply the necessary current to the gate and provide the necessary level of protection against overcurrent, overvoltage and short circuit.

When the voltage applied between the gate and the source is above the threshold voltage, the FET core will start to conduct, allowing current to flow through the drain and source of the FET. The gate driver is responsible for controlling the current level applied to the gate to ensure that the FET does not overheat and is not damaged.

The MTM982400BBF is capable of handling up to 600 mW of power, and it is designed to be used as a high side switching device. It also offers protection against overcurrent and overvoltage, as well as providing a low quiescent current which ensures low power consumption and high accuracy.

The MTM982400BBF is an ideal choice for high power applications, such as load switching, battery protection switching and other power switching applications. It is available in both chip scale and SIP packages, making it easy to integrate into any device. It is also cost effective, making it an attractive choice for designers looking for an affordable switch solution.

The specific data is subject to PDF, and the above content is for reference

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