MV2N4391 Allicdata Electronics
Allicdata Part #:

MV2N4391-ND

Manufacturer Part#:

MV2N4391

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: N CHANNEL JFET
More Detail: JFET
DataSheet: MV2N4391 datasheetMV2N4391 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Active
Description

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MV2N4391 Application Field and Working Principle

The MV2N4391 is a N-Channel enhancement mode Field-Effect Transistor (FET) made of high quality silicon. The transistor belongs to the larger group of a JFET or Junction Field-Effect Transistor, and is one of the most common and reliable types of FET. This article will explore the application field and working principle of the MV2N4391.The primary application of the MV2N4391 is in power circuits. This is because the FET has a very high input impedance and is able to handle large voltage and current variations with ease. It is also capable of very low noise operation and is commonly used in audio amplifiers and LED drivers. Additionally, the MV2N4391 is often used in automotive, industrial, and medical systems due to its high reliability.When it comes to the actual working principle of the MV2N4391, the transistor consists of two components: a gate, which is the control element, and a drain, which is the output element. When the gate receives an electrical signal, such as a voltage, it modulates the drain by controlling the current flow between them. This allows the user to control the amount of current supplied to the output device.When using FETs, one of the key things to remember is that they rely on a reverse biased source-drain voltage (Vsd) to operate properly. In other words, when the drain is connected to a higher voltage than the source, the transistor is biased in the direction of current flow. This enables the transistor to regulate current and voltage, allowing it to be used in many types of applications.In terms of its physical construction, the MV2N4391 is built on a silicon substrate, with a gate dielectric which is made up of an oxide-nitride-oxide structure. On top of this, the gate is covered with a metal contact, and this creates a strong electrical connection between the drain and the gate. The drain is connected to a transistor body, which is responsible for monitoring the current flowing in the circuit. In addition, the source and the drain are connected to a source protection diode, which keeps the transistor from being damaged when the source voltage drops below a certain level.In summary, the MV2N4391 is a N-Channel enhancement mode Field-Effect Transistor (FET) that is used in many types of high power circuits. It has a very high input impedance, low noise operation, and it is very reliable. The device works by controlling the current flow between the gate and the drain, and its construction involves silicon substrate, gate dielectric, metal contact, and source protection diode.

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