Allicdata Part #: | MV2N5114-ND |
Manufacturer Part#: |
MV2N5114 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | P CHANNEL JFET |
More Detail: | JFET P-Channel 30V 500mW Through Hole TO-18 (TO-2... |
DataSheet: | MV2N5114 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500 |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 90mA @ 18V |
Voltage - Cutoff (VGS off) @ Id: | 10V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 15V |
Resistance - RDS(On): | 75 Ohms |
Power - Max: | 500mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 (TO-206AA) |
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MV2N5114 application field and working principleThe MV2N5114 is a Junction Field Effect Transistor (JFET). It is one of the most commonly used semiconductor devices in electrical and electronic circuits. It is used to amplify, switch and control signals. The various possible applications of the MV2N5114 include power supplies, motor control, audio amplifier and switching circuits, low-noise amplifiers and many other circuit-control applications.
The MV2N5114 has an N-channel type, which is a type of JFET with an n-type substrate and a p-type gate. It has an off-state gate voltage of -2 V and an on-state gate voltage of +2 V. The device utilizes a two-terminal structure which makes it simpler than a BJT transistor. The two terminals are the drain and the source. The gate terminal, which is the controlling terminal, does not utilize a separate contact, but instead it is formed directly by the substrate.
The working principle of the MV2N5114 is based on its two-terminal structure. The applied gate voltage controls the current flowing through the drain and the source. This control is done by creating a depletion region between the gate and the substrate. The depletion region is formed by the current flowing through the substrate; this current then creates an electric field which is proportional to the applied gate voltage. The higher the gate voltage, the higher the drain to source current.
One of the primary applications of the MV2N5114 is in audio amplifier circuits. It is used in these circuits to amplify the signal by controlling the current flow through the device. The circuit is mainly composed of the MV2N5114 and its associated biasing components. The biasing components can be resistors or capacitors depending on the circuit configuration.
The MV2N5114 can also be used as a switch in switching circuits. When used in switching circuits, the device acts as an on-off switch for a circuit. The device is used in conjunction with other components to determine the switching characteristics of the circuit.
The MV2N5114 is also used in motor control circuits. This device is used to control the speed and direction of a motor. The device is used to control the current flowing through the motor, which then determines the speed and direction of the motor. The device is also used in power supplies to control the voltage and current flow.
In summary, the MV2N5114 is a Junction Field Effect Transistor (JFET) which is one of the most commonly used semiconductor devices for controlling signals. It has an N-channel type structure with an off-state gate voltage of -2 V and an on-state gate voltage of +2 V. The device utilizes a two-terminal structure which makes it simpler than a BJT transistor. Its primary applications include audio amplifiers, switches, motor control and power supplies.
The specific data is subject to PDF, and the above content is for reference
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