Allicdata Part #: | MV2N4861-ND |
Manufacturer Part#: |
MV2N4861 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | N CHANNEL JFET |
More Detail: | JFET N-Channel 30V 360mW Through Hole TO-18 (TO-2... |
DataSheet: | MV2N4861 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/385 |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 80mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 4V @ 0.5nA |
Input Capacitance (Ciss) (Max) @ Vds: | 18pF @ 10V |
Resistance - RDS(On): | 60 Ohms |
Power - Max: | 360mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 (TO-206AA) |
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The MV2N4861 is a high-performance, low-power, Joint Electron Device (JFET) field effect transistor (JFET) from Texas Instruments’ MOSFET product line. It is numerous varieties of JFETs, which are widely used in various kinds of electronic applications. The device is designed to be durable under long-term use and to provide optimal performance in all types of systems that use JFETs.
Features
- Low gate-source voltage
- Low gate current
- Low temperature coefficient
- High drain-source breakdown voltage
- Low input capacitance
- High-frequency operation
Applications
The MV2N4861 is suitable for use in industrial applications, medical devices, and consumer electronics. The device’s low gate-source voltage and low gate current make it suitable for use in power supplies and motor drivers. The device is also suitable for use in small-signal, low-noise applications, such as semiconductor test and measurement, RF transceivers, audio amplifiers, audio-visual equipment, and instrumentation. Additionally, the device is ideal for high-frequency applications, such as RF amplifiers and oscillators.
Working Principle
The MV2N4861 works on the principle of “junction field effect technology” or JFET. The device is a three-terminal device with the gate, drain, and source terminals. In this type of device, electrons flow from the source to the drain when an external voltage is applied to the gate terminal. The external voltage, or reverse-bias, creates an electric field at the junction between the gate and drain, which limits the current flowing through the device. This process is known as modulation, or changing the conductance. The device is designed to be highly stable under varying drain-source voltages and temperatures.
The MV2N4861 is suitable for various kinds of electronic applications, and its combination of low gate-source voltage and low gate current makes it suitable for use in various kinds of systems. The device’s low temperature coefficient and high drain-source breakdown voltage provide reliable operation under long-term use. The device’s low input capacitance, high frequency operation, and extremely low thresholds make it suitable for use in small-signal and high frequency applications.
The MV2N4861 is an essential component in a wide range of electronic applications. From power supplies and motor drivers to medical device and consumer electronics, the device is a reliable, low-power JFET that provides optimal performance in all types of systems that use JFETs.
The specific data is subject to PDF, and the above content is for reference
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