MV2N4859 Allicdata Electronics
Allicdata Part #:

MV2N4859-ND

Manufacturer Part#:

MV2N4859

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: N CHANNEL JFET
More Detail: JFET N-Channel 30V 360mW Through Hole TO-18 (TO-2...
DataSheet: MV2N4859 datasheetMV2N4859 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/385
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)
Description

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The MV2N4859 is a type of JFET transistor that is commonly used in various applications. It is a symmetrical N-channel JFET transistor with a PN-junction gate, less than 0.5-ohm drain-source resistance for normal operation, and a higher maximum power dissipation than other JFET transistors. The MV2N4859 is well suited to low-voltage and medium-power applications, such as power suppliers, amplifiers, and switching circuits.

One application area where the MV2N4859 is commonly used is in amplifiers. As a result of its relatively low 0.5-ohm drain-source resistance, the transistor is well-suited to applications that require high-performance components that are able to handle high-frequency signals without putting too much strain on the components. Due to its high maximum power dissipation, the MV2N4859 can also be used in receivers, radios, and audio circuits, as it is capable of providing a high level of gain in a relatively small package.

The MV2N4859 is also commonly used in power supplies. This is due to its low power dissipation and its ability to handle higher voltages than other JFET transistors. Additionally, its low drain-source resistance enables the transistor to regulate current at high speeds, allowing for the efficient transfer of power and the efficient delivery of power to loads. The transistor is also often used in switching circuits due to its ability to quickly switch between logic states with minimal power consumption.

The working principle of the MV2N4859 is relatively straightforward. As a symmetrical N-channel JFET transistor, the drain-source current can be controlled by the voltage applied to the gate. When the gate-to-source and drain-to-source voltages are equal, the MV2N4859 is in its normal state and the drain-source resistance is approximately 0.5 ohms. As the gate-to-source voltage increases, the current increases, thus decreasing the drain-source resistance. Conversely, as the gate-to-source voltage decreases, the current decreases and the drain-source resistance increases. Therefore, by properly controlling the gate voltage, the MV2N4859 can be used to accurately and efficiently regulate the current flow through the transistor, making it an ideal choice for power supply and switching applications.

In summary, the MV2N4859 is a type of JFET transistor that is commonly used in various applications, due to its low power dissipation and its ability to handle higher voltages. It is an ideal choice for amplifiers, receivers, power supplies, and switching circuits. The transistor operates by controlling the drain-source current flow through the application of a voltage to the gate, allowing for a high level of current control and efficiency.

The specific data is subject to PDF, and the above content is for reference

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