Allicdata Part #: | MV2N4860-ND |
Manufacturer Part#: |
MV2N4860 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | N CHANNEL JFET |
More Detail: | JFET N-Channel 30V 360mW Through Hole TO-18 |
DataSheet: | MV2N4860 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/385 |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 100mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 6V @ 500pA |
Input Capacitance (Ciss) (Max) @ Vds: | 18pF @ 10V |
Resistance - RDS(On): | 40 Ohms |
Power - Max: | 360mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 |
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The MV2N4860 is a JFET, otherwise known as a junction field-effect transistor. It is a three-terminal device in which a current flows from one terminal to another, depending on the voltage applied to the third terminal. By controlling the current applied to the third terminal, the current from the source to the drain can be adjusted to a desired value. JFETs possess steadily rising characteristics, making them ideal for a variety of applications.
The MV2N4860 is well-suited for low-current, low-voltage applications, such as RF amplification. It is capable of operating over a wide range of temperatures, from -65°C to 175°C, and is manufactured using the latest processes to ensure superior performance. Additionally, the MV2N4860 is designed with a high drain current rating of 50mA, making it suitable for applications where high current handling is required.
With regards to its working principle, the MV2N4860 operates by modulating the current flow between its source and drain terminals. It consists of a gate, a source and a drain. When a small voltage is applied to the gate terminal, the current flowing from the source to the drain is influenced. The higher the applied gate voltage, the greater the current flow. The input resistance of the MV2N4860 is high, resulting in a low noise level and improved signal-to-noise ratio.
In addition to its use as an amplifier, the MV2N4860 can also be used as a switch. By applying a negative gate voltage, the current from the source to the drain is effectively cut off, thus acting as a switch. This property makes the MV2N4860 ideal for switching circuit applications. Furthermore, the MV2N4860 is also capable of integrating capacitances and providing frequency shaping, making it valuable for a wide range of circuit designs.
In conclusion, the MV2N4860 is a versatile and high-performance JFET that can be used in a variety of applications. Its wide temperature range makes it suitable for both industrial and consumer applications, while its steady characteristics and high switching capability make it suitable for low-current and low-voltage applications. Furthermore, its integrated capacitances and frequency-shaping capabilities make it ideal for a variety of circuit designs.
The specific data is subject to PDF, and the above content is for reference
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