MV2N4858

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Transistors – JFETs

The MV2N4858 is a high-performance silicon N-Channel junction field-effect transistor (JFET) developed for use in various switching applications. With a maximum drain-source voltage of 48V and a maximum channel enhancement mode of -7V, the MV2N4858 has a higher voltage rating than most other JFETs, making it suitable for use in industrial automation systems and communication systems.

Application field and working principle

The MV2N4858 JFET is designed to enable control of low-frequency signals within automated systems and communication systems. It is useful for applications where a transistor must be used to switch a small amount of current. Examples include allowing control of voltage levels, creating a precise voltage reference for a particular source, and acting as a low-noise amplifier.

JFETs work by controlling the flow of electrons from a voltage source to a current source. A JFET has four elements: gate, source, drain, and body (or substrate). The gate forms a semiconductor junction with the body, while the source and drain injects electrons into the channel between the gate and the body. The amount of current flowing through the channel is controlled by the voltage applied to the gate. When the voltage applied to the gate increases, the current decreases, and when the voltage applied to the gate decreases, the current increases. By controlling the voltage applied to the gate, the current can be accurately regulated.

The MV2N4858 is well suited for use in industrial automation systems and communication systems. It can be used to control low-frequency signals, and is suitable for applications where a transistor must be used to switch a small amount of current. Its high voltage rating allows for reliable and accurate voltage control. Additionally, its low-noise performance ensures minimal interference with other signals.

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